JPS5328879B1 - - Google Patents
Info
- Publication number
- JPS5328879B1 JPS5328879B1 JP2443072A JP2443072A JPS5328879B1 JP S5328879 B1 JPS5328879 B1 JP S5328879B1 JP 2443072 A JP2443072 A JP 2443072A JP 2443072 A JP2443072 A JP 2443072A JP S5328879 B1 JPS5328879 B1 JP S5328879B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
- H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
- H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
- H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
- Y10T428/24322—Composite web or sheet
- Y10T428/24331—Composite web or sheet including nonapertured component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Photosensitive Polymer And Photoresist Processing (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
- Weting (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB688471 | 1971-03-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5328879B1 true JPS5328879B1 (enExample) | 1978-08-17 |
Family
ID=9822552
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2443072A Pending JPS5328879B1 (enExample) | 1971-03-15 | 1972-03-11 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3825466A (enExample) |
| JP (1) | JPS5328879B1 (enExample) |
| DE (1) | DE2211875A1 (enExample) |
| FR (1) | FR2130196B1 (enExample) |
| GB (1) | GB1316711A (enExample) |
| IT (1) | IT952963B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS552041U (enExample) * | 1978-06-20 | 1980-01-08 |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4041190A (en) * | 1971-06-29 | 1977-08-09 | Thomson-Csf | Method for producing a silica mask on a semiconductor substrate |
| DE2364850A1 (de) * | 1972-12-29 | 1974-07-04 | Atomic Energy Of Australia | Verfahren zum fotoaetzen und fototiefdrucken unter verwendung von durch spaltbruchstuecken und/oder alphateilchen verursachte strahlen-aetzspuren von getonten fotographien |
| GB1451623A (en) * | 1973-10-01 | 1976-10-06 | Mullard Ltd | Method of prov8ding a patterned layer of silicon-containing oxide on a substrate |
| JPS5945946A (ja) * | 1982-09-06 | 1984-03-15 | Toyota Central Res & Dev Lab Inc | 中空糸状多孔質ガラスの製造法 |
| JPS6221151A (ja) * | 1985-07-19 | 1987-01-29 | Matsushita Electric Ind Co Ltd | パタ−ン形成方法 |
| AU587913B2 (en) * | 1986-10-03 | 1989-08-31 | Denki Kagaku Kogyo Kabushiki Kaisha | Heat resistant vessel and process for manufacturing same |
-
1971
- 1971-03-15 GB GB688471*[A patent/GB1316711A/en not_active Expired
-
1972
- 1972-03-11 DE DE19722211875 patent/DE2211875A1/de active Granted
- 1972-03-11 IT IT67782/72A patent/IT952963B/it active
- 1972-03-11 JP JP2443072A patent/JPS5328879B1/ja active Pending
- 1972-03-13 US US00234193A patent/US3825466A/en not_active Expired - Lifetime
- 1972-03-14 FR FR7208778A patent/FR2130196B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS552041U (enExample) * | 1978-06-20 | 1980-01-08 |
Also Published As
| Publication number | Publication date |
|---|---|
| IT952963B (it) | 1973-07-30 |
| US3825466A (en) | 1974-07-23 |
| FR2130196B1 (enExample) | 1977-09-02 |
| GB1316711A (en) | 1973-05-16 |
| DE2211875C3 (enExample) | 1979-09-13 |
| DE2211875A1 (de) | 1972-09-28 |
| FR2130196A1 (enExample) | 1972-11-03 |
| DE2211875B2 (enExample) | 1979-01-11 |