JPS5321275B2 - - Google Patents
Info
- Publication number
- JPS5321275B2 JPS5321275B2 JP2564472A JP2564472A JPS5321275B2 JP S5321275 B2 JPS5321275 B2 JP S5321275B2 JP 2564472 A JP2564472 A JP 2564472A JP 2564472 A JP2564472 A JP 2564472A JP S5321275 B2 JPS5321275 B2 JP S5321275B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30612—Etching of AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Semiconductor Lasers (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564472A JPS5321275B2 (it) | 1972-03-13 | 1972-03-13 | |
| DE2312162A DE2312162C3 (de) | 1972-03-13 | 1973-03-12 | Halbleiterlaserplättchen und Verfahren zu seiner Herstellung |
| NL7303449.A NL159536B (nl) | 1972-03-13 | 1973-03-12 | Halfgeleiderlaser en werkwijze voor het vervaardigen daarvan. |
| GB1184073A GB1419695A (it) | 1972-03-13 | 1973-03-12 | |
| US05/612,103 US4142160A (en) | 1972-03-13 | 1975-09-10 | Hetero-structure injection laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2564472A JPS5321275B2 (it) | 1972-03-13 | 1972-03-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4894378A JPS4894378A (it) | 1973-12-05 |
| JPS5321275B2 true JPS5321275B2 (it) | 1978-07-01 |
Family
ID=12171529
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2564472A Expired JPS5321275B2 (it) | 1972-03-13 | 1972-03-13 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5321275B2 (it) |
| DE (1) | DE2312162C3 (it) |
| GB (1) | GB1419695A (it) |
| NL (1) | NL159536B (it) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
| NL176323C (nl) * | 1975-03-11 | 1985-03-18 | Philips Nv | Halfgeleiderinrichting voor het opwekken van incoherente straling. |
| JPS606118B2 (ja) * | 1975-03-12 | 1985-02-15 | 株式会社日立製作所 | 半導体レーザ装置 |
| JPS5215280A (en) * | 1975-07-28 | 1977-02-04 | Nippon Telegr & Teleph Corp <Ntt> | Cleavage semiconductor laser equipped with side surface light take-out waveguide |
| JPS5245296A (en) * | 1975-10-07 | 1977-04-09 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductive phototransmission pass and semiconductor emission devic e used it |
| DE2760112C2 (it) * | 1976-07-02 | 1989-05-18 | N.V. Philips' Gloeilampenfabrieken, Eindhoven, Nl | |
| NL7607299A (nl) * | 1976-07-02 | 1978-01-04 | Philips Nv | Injektielaser. |
| JPS5842283A (ja) * | 1981-09-04 | 1983-03-11 | Nippon Telegr & Teleph Corp <Ntt> | 埋込み型半導体レ−ザの製法 |
| JPS62157339A (ja) * | 1986-11-28 | 1987-07-13 | Hitachi Ltd | 情報再生装置 |
| CA2006597A1 (en) * | 1988-12-26 | 1990-06-26 | Kazuo Kogure | Method for manufacturing compound semiconductor devices and a compound semiconductor device |
| CA2089900C (en) * | 1992-02-20 | 2001-10-16 | Ichiro Yoshida | Multi-beam semiconductor laser and method for producing the same |
| JP4189610B2 (ja) * | 1998-05-08 | 2008-12-03 | ソニー株式会社 | 光電変換素子およびその製造方法 |
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1972
- 1972-03-13 JP JP2564472A patent/JPS5321275B2/ja not_active Expired
-
1973
- 1973-03-12 DE DE2312162A patent/DE2312162C3/de not_active Expired
- 1973-03-12 GB GB1184073A patent/GB1419695A/en not_active Expired
- 1973-03-12 NL NL7303449.A patent/NL159536B/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4894378A (it) | 1973-12-05 |
| GB1419695A (it) | 1975-12-31 |
| NL159536B (nl) | 1979-02-15 |
| DE2312162A1 (de) | 1973-10-04 |
| DE2312162B2 (de) | 1977-07-14 |
| NL7303449A (it) | 1973-09-17 |
| DE2312162C3 (de) | 1978-03-09 |