JPS5320783A - Hall element sensitivity intensifying system - Google Patents

Hall element sensitivity intensifying system

Info

Publication number
JPS5320783A
JPS5320783A JP9478976A JP9478976A JPS5320783A JP S5320783 A JPS5320783 A JP S5320783A JP 9478976 A JP9478976 A JP 9478976A JP 9478976 A JP9478976 A JP 9478976A JP S5320783 A JPS5320783 A JP S5320783A
Authority
JP
Japan
Prior art keywords
hall element
element sensitivity
intensifying system
sensitivity intensifying
transistion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9478976A
Other languages
Japanese (ja)
Other versions
JPS541638B2 (en
Inventor
Terue Kataoka
Yoshinobu Sugiyama
Hiroyuki Fujisada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP9478976A priority Critical patent/JPS5320783A/en
Priority to US05/822,658 priority patent/US4204132A/en
Publication of JPS5320783A publication Critical patent/JPS5320783A/en
Publication of JPS541638B2 publication Critical patent/JPS541638B2/ja
Granted legal-status Critical Current

Links

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  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To reduce effective electron density and increase Hall coefficient hence increase sensitivity by applying a voltage at which a semiconductor shows electron transistion effect between input current electrodes.
COPYRIGHT: (C)1978,JPO&Japio
JP9478976A 1976-08-11 1976-08-11 Hall element sensitivity intensifying system Granted JPS5320783A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP9478976A JPS5320783A (en) 1976-08-11 1976-08-11 Hall element sensitivity intensifying system
US05/822,658 US4204132A (en) 1976-08-11 1977-08-08 Highly sensitive Hall element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9478976A JPS5320783A (en) 1976-08-11 1976-08-11 Hall element sensitivity intensifying system

Publications (2)

Publication Number Publication Date
JPS5320783A true JPS5320783A (en) 1978-02-25
JPS541638B2 JPS541638B2 (en) 1979-01-26

Family

ID=14119836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9478976A Granted JPS5320783A (en) 1976-08-11 1976-08-11 Hall element sensitivity intensifying system

Country Status (1)

Country Link
JP (1) JPS5320783A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6192591A (en) * 1984-10-12 1986-05-10 Nisshin Oil Mills Ltd:The Production of xanthan gum
WO2003010836A1 (en) * 2001-07-26 2003-02-06 Asahi Kasei Electronics Co., Ltd. Semiconductor hall sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6192591A (en) * 1984-10-12 1986-05-10 Nisshin Oil Mills Ltd:The Production of xanthan gum
JPH0478277B2 (en) * 1984-10-12 1992-12-10 Nisshin Oil Mills Ltd
WO2003010836A1 (en) * 2001-07-26 2003-02-06 Asahi Kasei Electronics Co., Ltd. Semiconductor hall sensor
US6803638B2 (en) 2001-07-26 2004-10-12 Asahi Kasei Electronics Co., Ltd. Semiconductor hall sensor
CN100375308C (en) * 2001-07-26 2008-03-12 旭化成电子材料元件株式会社 Semiconductor hall sensor

Also Published As

Publication number Publication date
JPS541638B2 (en) 1979-01-26

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