JPS5319843A - Optooelectronic element for suppressing light transmission and method of producing same - Google Patents

Optooelectronic element for suppressing light transmission and method of producing same

Info

Publication number
JPS5319843A
JPS5319843A JP5715777A JP5715777A JPS5319843A JP S5319843 A JPS5319843 A JP S5319843A JP 5715777 A JP5715777 A JP 5715777A JP 5715777 A JP5715777 A JP 5715777A JP S5319843 A JPS5319843 A JP S5319843A
Authority
JP
Japan
Prior art keywords
optooelectronic
light transmission
producing same
suppressing light
suppressing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5715777A
Other languages
English (en)
Japanese (ja)
Inventor
Kiyameron Daimento Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nortel Networks Ltd
Original Assignee
Northern Telecom Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Northern Telecom Ltd filed Critical Northern Telecom Ltd
Publication of JPS5319843A publication Critical patent/JPS5319843A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Optical Integrated Circuits (AREA)
JP5715777A 1976-06-07 1977-05-19 Optooelectronic element for suppressing light transmission and method of producing same Pending JPS5319843A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CA254,255A CA1056043A (en) 1976-06-07 1976-06-07 Optoelectronic devices with control of light propagation

Publications (1)

Publication Number Publication Date
JPS5319843A true JPS5319843A (en) 1978-02-23

Family

ID=4106155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5715777A Pending JPS5319843A (en) 1976-06-07 1977-05-19 Optooelectronic element for suppressing light transmission and method of producing same

Country Status (9)

Country Link
JP (1) JPS5319843A (nl)
CA (1) CA1056043A (nl)
DE (1) DE2716749A1 (nl)
ES (1) ES459549A1 (nl)
FR (1) FR2354637A1 (nl)
GB (1) GB1578638A (nl)
IT (1) IT1076300B (nl)
NL (1) NL7703509A (nl)
SE (1) SE7706624L (nl)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845737U (ja) * 1981-09-22 1983-03-28 不動建設株式会社 砂杭などの造成用中空管
JPS5845736U (ja) * 1981-09-21 1983-03-28 不動建設株式会社 砂杭などの造成用中空管
JPS58164814A (ja) * 1982-03-25 1983-09-29 Fudo Constr Co Ltd 砂杭造成工法
JPS59203117A (ja) * 1983-05-02 1984-11-17 Fudo Constr Co Ltd 軟弱地盤の改良工法および装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845736U (ja) * 1981-09-21 1983-03-28 不動建設株式会社 砂杭などの造成用中空管
JPS5845737U (ja) * 1981-09-22 1983-03-28 不動建設株式会社 砂杭などの造成用中空管
JPS58164814A (ja) * 1982-03-25 1983-09-29 Fudo Constr Co Ltd 砂杭造成工法
JPS59203117A (ja) * 1983-05-02 1984-11-17 Fudo Constr Co Ltd 軟弱地盤の改良工法および装置

Also Published As

Publication number Publication date
CA1056043A (en) 1979-06-05
GB1578638A (en) 1980-11-05
SE7706624L (sv) 1977-12-08
NL7703509A (nl) 1977-12-09
DE2716749A1 (de) 1977-12-15
IT1076300B (it) 1985-04-27
FR2354637A1 (fr) 1978-01-06
ES459549A1 (es) 1978-11-16

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