SE7706624L - Optoelektronisk anordning samt sett for dess tillverkning - Google Patents
Optoelektronisk anordning samt sett for dess tillverkningInfo
- Publication number
- SE7706624L SE7706624L SE7706624A SE7706624A SE7706624L SE 7706624 L SE7706624 L SE 7706624L SE 7706624 A SE7706624 A SE 7706624A SE 7706624 A SE7706624 A SE 7706624A SE 7706624 L SE7706624 L SE 7706624L
- Authority
- SE
- Sweden
- Prior art keywords
- kit
- manufacture
- optoelectronic device
- optoelectronic
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000005693 optoelectronics Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
- H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0601—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising an absorbing region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Photovoltaic Devices (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA254,255A CA1056043A (en) | 1976-06-07 | 1976-06-07 | Optoelectronic devices with control of light propagation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE7706624L true SE7706624L (sv) | 1977-12-08 |
Family
ID=4106155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7706624A SE7706624L (sv) | 1976-06-07 | 1977-06-07 | Optoelektronisk anordning samt sett for dess tillverkning |
Country Status (9)
| Country | Link |
|---|---|
| JP (1) | JPS5319843A (sv) |
| CA (1) | CA1056043A (sv) |
| DE (1) | DE2716749A1 (sv) |
| ES (1) | ES459549A1 (sv) |
| FR (1) | FR2354637A1 (sv) |
| GB (1) | GB1578638A (sv) |
| IT (1) | IT1076300B (sv) |
| NL (1) | NL7703509A (sv) |
| SE (1) | SE7706624L (sv) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5845736U (ja) * | 1981-09-21 | 1983-03-28 | 不動建設株式会社 | 砂杭などの造成用中空管 |
| JPS58164814A (ja) * | 1982-03-25 | 1983-09-29 | Fudo Constr Co Ltd | 砂杭造成工法 |
| JPS5845737U (ja) * | 1981-09-22 | 1983-03-28 | 不動建設株式会社 | 砂杭などの造成用中空管 |
| JPS59203117A (ja) * | 1983-05-02 | 1984-11-17 | Fudo Constr Co Ltd | 軟弱地盤の改良工法および装置 |
-
1976
- 1976-06-07 CA CA254,255A patent/CA1056043A/en not_active Expired
-
1977
- 1977-03-18 GB GB11617/77A patent/GB1578638A/en not_active Expired
- 1977-03-31 IT IT21941/77A patent/IT1076300B/it active
- 1977-03-31 NL NL7703509A patent/NL7703509A/xx not_active Application Discontinuation
- 1977-04-15 DE DE19772716749 patent/DE2716749A1/de active Pending
- 1977-05-19 JP JP5715777A patent/JPS5319843A/ja active Pending
- 1977-06-06 FR FR7717285A patent/FR2354637A1/fr not_active Withdrawn
- 1977-06-07 ES ES459549A patent/ES459549A1/es not_active Expired
- 1977-06-07 SE SE7706624A patent/SE7706624L/sv unknown
Also Published As
| Publication number | Publication date |
|---|---|
| FR2354637A1 (fr) | 1978-01-06 |
| GB1578638A (en) | 1980-11-05 |
| NL7703509A (nl) | 1977-12-09 |
| DE2716749A1 (de) | 1977-12-15 |
| JPS5319843A (en) | 1978-02-23 |
| IT1076300B (it) | 1985-04-27 |
| ES459549A1 (es) | 1978-11-16 |
| CA1056043A (en) | 1979-06-05 |
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