JPS5318153B2 - - Google Patents

Info

Publication number
JPS5318153B2
JPS5318153B2 JP7617672A JP7617672A JPS5318153B2 JP S5318153 B2 JPS5318153 B2 JP S5318153B2 JP 7617672 A JP7617672 A JP 7617672A JP 7617672 A JP7617672 A JP 7617672A JP S5318153 B2 JPS5318153 B2 JP S5318153B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7617672A
Other languages
Japanese (ja)
Other versions
JPS4934275A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP7617672A priority Critical patent/JPS5318153B2/ja
Priority to GB3494573A priority patent/GB1414060A/en
Priority to CA177,297A priority patent/CA987795A/en
Priority to IT69257/73A priority patent/IT991882B/it
Priority to DE2338244A priority patent/DE2338244B2/de
Priority to FR7327721A priority patent/FR2195069B1/fr
Priority to US383653A priority patent/US3909317A/en
Publication of JPS4934275A publication Critical patent/JPS4934275A/ja
Publication of JPS5318153B2 publication Critical patent/JPS5318153B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP7617672A 1972-07-28 1972-07-28 Expired JPS5318153B2 (enrdf_load_stackoverflow)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP7617672A JPS5318153B2 (enrdf_load_stackoverflow) 1972-07-28 1972-07-28
GB3494573A GB1414060A (en) 1972-07-28 1973-07-23 Semoconductor devices
CA177,297A CA987795A (en) 1972-07-28 1973-07-25 Apparatus and method for making multi-layer epitaxial growth devices
IT69257/73A IT991882B (it) 1972-07-28 1973-07-26 Procedimento e dispositivo per la produzione di semiconduttori com prendenti piu strati epitassiali
DE2338244A DE2338244B2 (de) 1972-07-28 1973-07-27 Verfahren und Vorrichtung zur Herstellung eines mehrschichtig aufgebauten Halbleiter-Bauelementes mit epitaktischen Aufwachsschichten
FR7327721A FR2195069B1 (enrdf_load_stackoverflow) 1972-07-28 1973-07-27
US383653A US3909317A (en) 1972-07-28 1973-07-30 Formation of abrupt junctions in liquid phase epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7617672A JPS5318153B2 (enrdf_load_stackoverflow) 1972-07-28 1972-07-28

Publications (2)

Publication Number Publication Date
JPS4934275A JPS4934275A (enrdf_load_stackoverflow) 1974-03-29
JPS5318153B2 true JPS5318153B2 (enrdf_load_stackoverflow) 1978-06-13

Family

ID=13597779

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7617672A Expired JPS5318153B2 (enrdf_load_stackoverflow) 1972-07-28 1972-07-28

Country Status (1)

Country Link
JP (1) JPS5318153B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5190267A (en) * 1975-02-04 1976-08-07 Handotaihakumakuno seisakuhoho
JPS51128274A (en) * 1975-05-01 1976-11-09 Oki Electric Ind Co Ltd Semiconductor unit
JPS5254371A (en) * 1975-10-30 1977-05-02 Nippon Telegr & Teleph Corp <Ntt> Liquid phase epitaxial growth method
JPS5478377A (en) * 1977-12-05 1979-06-22 Nec Corp Method and apparatus for growing semiconductor crystal
JPS56101785A (en) * 1980-01-18 1981-08-14 Matsushita Electric Ind Co Ltd Light emitting semiconductor device and manufacture thereof
JPS60233879A (ja) * 1984-05-02 1985-11-20 Oki Electric Ind Co Ltd 半導体発光素子の製造方法

Also Published As

Publication number Publication date
JPS4934275A (enrdf_load_stackoverflow) 1974-03-29

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