JPS5318153B2 - - Google Patents
Info
- Publication number
- JPS5318153B2 JPS5318153B2 JP7617672A JP7617672A JPS5318153B2 JP S5318153 B2 JPS5318153 B2 JP S5318153B2 JP 7617672 A JP7617672 A JP 7617672A JP 7617672 A JP7617672 A JP 7617672A JP S5318153 B2 JPS5318153 B2 JP S5318153B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7617672A JPS5318153B2 (cg-RX-API-DMAC7.html) | 1972-07-28 | 1972-07-28 | |
| GB3494573A GB1414060A (en) | 1972-07-28 | 1973-07-23 | Semoconductor devices |
| CA177,297A CA987795A (en) | 1972-07-28 | 1973-07-25 | Apparatus and method for making multi-layer epitaxial growth devices |
| IT69257/73A IT991882B (it) | 1972-07-28 | 1973-07-26 | Procedimento e dispositivo per la produzione di semiconduttori com prendenti piu strati epitassiali |
| FR7327721A FR2195069B1 (cg-RX-API-DMAC7.html) | 1972-07-28 | 1973-07-27 | |
| DE2338244A DE2338244B2 (de) | 1972-07-28 | 1973-07-27 | Verfahren und Vorrichtung zur Herstellung eines mehrschichtig aufgebauten Halbleiter-Bauelementes mit epitaktischen Aufwachsschichten |
| US383653A US3909317A (en) | 1972-07-28 | 1973-07-30 | Formation of abrupt junctions in liquid phase epitaxy |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7617672A JPS5318153B2 (cg-RX-API-DMAC7.html) | 1972-07-28 | 1972-07-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4934275A JPS4934275A (cg-RX-API-DMAC7.html) | 1974-03-29 |
| JPS5318153B2 true JPS5318153B2 (cg-RX-API-DMAC7.html) | 1978-06-13 |
Family
ID=13597779
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7617672A Expired JPS5318153B2 (cg-RX-API-DMAC7.html) | 1972-07-28 | 1972-07-28 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5318153B2 (cg-RX-API-DMAC7.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5190267A (en) * | 1975-02-04 | 1976-08-07 | Handotaihakumakuno seisakuhoho | |
| JPS51128274A (en) * | 1975-05-01 | 1976-11-09 | Oki Electric Ind Co Ltd | Semiconductor unit |
| JPS5254371A (en) * | 1975-10-30 | 1977-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Liquid phase epitaxial growth method |
| JPS5478377A (en) * | 1977-12-05 | 1979-06-22 | Nec Corp | Method and apparatus for growing semiconductor crystal |
| JPS56101785A (en) * | 1980-01-18 | 1981-08-14 | Matsushita Electric Ind Co Ltd | Light emitting semiconductor device and manufacture thereof |
| JPS60233879A (ja) * | 1984-05-02 | 1985-11-20 | Oki Electric Ind Co Ltd | 半導体発光素子の製造方法 |
-
1972
- 1972-07-28 JP JP7617672A patent/JPS5318153B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4934275A (cg-RX-API-DMAC7.html) | 1974-03-29 |