JPS5317394B2 - - Google Patents
Info
- Publication number
- JPS5317394B2 JPS5317394B2 JP4052673A JP4052673A JPS5317394B2 JP S5317394 B2 JPS5317394 B2 JP S5317394B2 JP 4052673 A JP4052673 A JP 4052673A JP 4052673 A JP4052673 A JP 4052673A JP S5317394 B2 JPS5317394 B2 JP S5317394B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25244572A | 1972-05-11 | 1972-05-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4924373A JPS4924373A (OSRAM) | 1974-03-04 |
| JPS5317394B2 true JPS5317394B2 (OSRAM) | 1978-06-08 |
Family
ID=22956030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4052673A Expired JPS5317394B2 (OSRAM) | 1972-05-11 | 1973-04-11 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5317394B2 (OSRAM) |
| CA (1) | CA985793A (OSRAM) |
| DE (1) | DE2314747A1 (OSRAM) |
| FR (1) | FR2183709A1 (OSRAM) |
| IT (1) | IT979178B (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112779A (en) * | 1974-07-23 | 1976-01-31 | Tokyo Shibaura Electric Co | Handotaisochito sonoseizohoho |
| JPS52146578A (en) * | 1976-05-28 | 1977-12-06 | Texas Instruments Inc | Method of producing resistance element and semiconductor device having same element |
| JPS54136279A (en) * | 1978-04-14 | 1979-10-23 | Nec Corp | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404321A (en) * | 1963-01-29 | 1968-10-01 | Nippon Electric Co | Transistor body enclosing a submerged integrated resistor |
| FR1547292A (fr) * | 1966-12-19 | 1968-11-22 | Gen Electric | Perfectionnements aux dispositifs à semiconducteur |
| NL170902C (nl) * | 1970-07-10 | 1983-01-03 | Philips Nv | Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
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1973
- 1973-02-16 IT IT7320473A patent/IT979178B/it active
- 1973-03-24 DE DE19732314747 patent/DE2314747A1/de active Pending
- 1973-03-30 FR FR7313782A patent/FR2183709A1/fr active Granted
- 1973-04-11 JP JP4052673A patent/JPS5317394B2/ja not_active Expired
- 1973-04-13 CA CA169,267A patent/CA985793A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| CA985793A (en) | 1976-03-16 |
| FR2183709A1 (en) | 1973-12-21 |
| IT979178B (it) | 1974-09-30 |
| DE2314747A1 (de) | 1973-11-22 |
| JPS4924373A (OSRAM) | 1974-03-04 |
| FR2183709B1 (OSRAM) | 1976-05-28 |