FR2183709B1 - - Google Patents

Info

Publication number
FR2183709B1
FR2183709B1 FR7313782*A FR7313782A FR2183709B1 FR 2183709 B1 FR2183709 B1 FR 2183709B1 FR 7313782 A FR7313782 A FR 7313782A FR 2183709 B1 FR2183709 B1 FR 2183709B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7313782*A
Other languages
French (fr)
Other versions
FR2183709A1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2183709A1 publication Critical patent/FR2183709A1/fr
Application granted granted Critical
Publication of FR2183709B1 publication Critical patent/FR2183709B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H10W10/0121—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/43—Resistors having PN junctions
    • H10W10/13—
    • H10W20/021—
FR7313782A 1972-05-11 1973-03-30 Semiconductor resistance - in epitaxial layer buried below insulating layer, for high element density Granted FR2183709A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US25244572A 1972-05-11 1972-05-11

Publications (2)

Publication Number Publication Date
FR2183709A1 FR2183709A1 (en) 1973-12-21
FR2183709B1 true FR2183709B1 (OSRAM) 1976-05-28

Family

ID=22956030

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7313782A Granted FR2183709A1 (en) 1972-05-11 1973-03-30 Semiconductor resistance - in epitaxial layer buried below insulating layer, for high element density

Country Status (5)

Country Link
JP (1) JPS5317394B2 (OSRAM)
CA (1) CA985793A (OSRAM)
DE (1) DE2314747A1 (OSRAM)
FR (1) FR2183709A1 (OSRAM)
IT (1) IT979178B (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5112779A (en) * 1974-07-23 1976-01-31 Tokyo Shibaura Electric Co Handotaisochito sonoseizohoho
JPS52146578A (en) * 1976-05-28 1977-12-06 Texas Instruments Inc Method of producing resistance element and semiconductor device having same element
JPS54136279A (en) * 1978-04-14 1979-10-23 Nec Corp Semiconductor device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404321A (en) * 1963-01-29 1968-10-01 Nippon Electric Co Transistor body enclosing a submerged integrated resistor
FR1547292A (fr) * 1966-12-19 1968-11-22 Gen Electric Perfectionnements aux dispositifs à semiconducteur
NL170902C (nl) * 1970-07-10 1983-01-03 Philips Nv Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling.
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure

Also Published As

Publication number Publication date
FR2183709A1 (en) 1973-12-21
JPS4924373A (OSRAM) 1974-03-04
CA985793A (en) 1976-03-16
IT979178B (it) 1974-09-30
JPS5317394B2 (OSRAM) 1978-06-08
DE2314747A1 (de) 1973-11-22

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Legal Events

Date Code Title Description
ST Notification of lapse