JPS53129989A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS53129989A
JPS53129989A JP4531277A JP4531277A JPS53129989A JP S53129989 A JPS53129989 A JP S53129989A JP 4531277 A JP4531277 A JP 4531277A JP 4531277 A JP4531277 A JP 4531277A JP S53129989 A JPS53129989 A JP S53129989A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
active region
region
burying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4531277A
Other languages
Japanese (ja)
Inventor
Kunio Ito
Seiji Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4531277A priority Critical patent/JPS53129989A/en
Publication of JPS53129989A publication Critical patent/JPS53129989A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06213Amplitude modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226Modulation at ultra-high frequencies

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To make possible high er speed internal modulation by burying a high resistance region having a specific resistance higher than that of an active region within part of the active region and applying a modulating signal thereto.
JP4531277A 1977-04-19 1977-04-19 Semiconductor laser device Pending JPS53129989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4531277A JPS53129989A (en) 1977-04-19 1977-04-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4531277A JPS53129989A (en) 1977-04-19 1977-04-19 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS53129989A true JPS53129989A (en) 1978-11-13

Family

ID=12715782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4531277A Pending JPS53129989A (en) 1977-04-19 1977-04-19 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS53129989A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142189A (en) * 1984-08-02 1986-02-28 Matsushita Electric Ind Co Ltd Semiconductor laser

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3431512A (en) * 1964-06-29 1969-03-04 Union Carbide Corp Junction laser with controlled output
JPS5197390A (en) * 1975-02-21 1976-08-26 HANDOTAIREEZASOSHI

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3431512A (en) * 1964-06-29 1969-03-04 Union Carbide Corp Junction laser with controlled output
JPS5197390A (en) * 1975-02-21 1976-08-26 HANDOTAIREEZASOSHI

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6142189A (en) * 1984-08-02 1986-02-28 Matsushita Electric Ind Co Ltd Semiconductor laser

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