JPS5381097A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS5381097A
JPS5381097A JP15651876A JP15651876A JPS5381097A JP S5381097 A JPS5381097 A JP S5381097A JP 15651876 A JP15651876 A JP 15651876A JP 15651876 A JP15651876 A JP 15651876A JP S5381097 A JPS5381097 A JP S5381097A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
narrowing
frequency band
provide protection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15651876A
Other languages
Japanese (ja)
Inventor
Juichi Shimada
Junichi Umeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP15651876A priority Critical patent/JPS5381097A/en
Publication of JPS5381097A publication Critical patent/JPS5381097A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To provide protection from surge voltage by tunnel diodes directly added to a semiconductor laser without narrowing at all the frequency band that can be directly modulated.
JP15651876A 1976-12-27 1976-12-27 Semiconductor laser device Pending JPS5381097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15651876A JPS5381097A (en) 1976-12-27 1976-12-27 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15651876A JPS5381097A (en) 1976-12-27 1976-12-27 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5381097A true JPS5381097A (en) 1978-07-18

Family

ID=15629526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15651876A Pending JPS5381097A (en) 1976-12-27 1976-12-27 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5381097A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818988A (en) * 1981-07-28 1983-02-03 Toshiba Corp Driving device for semiconductor laser
JPS58161157A (en) * 1982-03-19 1983-09-24 Hitachi Ltd Driving device of semiconductor laser
JPS58206181A (en) * 1982-05-26 1983-12-01 Hitachi Ltd Protective circuit for laser diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5818988A (en) * 1981-07-28 1983-02-03 Toshiba Corp Driving device for semiconductor laser
JPS58161157A (en) * 1982-03-19 1983-09-24 Hitachi Ltd Driving device of semiconductor laser
JPS58206181A (en) * 1982-05-26 1983-12-01 Hitachi Ltd Protective circuit for laser diode

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