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Hitachi Ltd
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Hitachi Ltd
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Application filed by Hitachi LtdfiledCriticalHitachi Ltd
Priority to JP4038277ApriorityCriticalpatent/JPS53126259A/en
Publication of JPS53126259ApublicationCriticalpatent/JPS53126259A/en
PURPOSE: To cause satisfactory selective growth without introducing HCl gas into reaction system and make the growth thickness even irrespective of the Si exposure area of the selectively grown parts.