JPS53118381A - 2-terminal thyristor - Google Patents

2-terminal thyristor

Info

Publication number
JPS53118381A
JPS53118381A JP3372177A JP3372177A JPS53118381A JP S53118381 A JPS53118381 A JP S53118381A JP 3372177 A JP3372177 A JP 3372177A JP 3372177 A JP3372177 A JP 3372177A JP S53118381 A JPS53118381 A JP S53118381A
Authority
JP
Japan
Prior art keywords
anode
cathode
ignition
terminal thyristor
cathodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3372177A
Other languages
Japanese (ja)
Other versions
JPS6219079B2 (en
Inventor
Yukiyasu Usunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3372177A priority Critical patent/JPS53118381A/en
Publication of JPS53118381A publication Critical patent/JPS53118381A/en
Publication of JPS6219079B2 publication Critical patent/JPS6219079B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To simplify the design of dv/dt ignition element, by securing a larger width for the cathode or anode which has the first ignition than other cathodes or anodes and at the same time decreasing the space between the other cathode or anode which is closest to the cathode or anode having the first ignition less than the diffusion length of the minor carrier.
JP3372177A 1977-03-25 1977-03-25 2-terminal thyristor Granted JPS53118381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3372177A JPS53118381A (en) 1977-03-25 1977-03-25 2-terminal thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3372177A JPS53118381A (en) 1977-03-25 1977-03-25 2-terminal thyristor

Publications (2)

Publication Number Publication Date
JPS53118381A true JPS53118381A (en) 1978-10-16
JPS6219079B2 JPS6219079B2 (en) 1987-04-25

Family

ID=12394256

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3372177A Granted JPS53118381A (en) 1977-03-25 1977-03-25 2-terminal thyristor

Country Status (1)

Country Link
JP (1) JPS53118381A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5446103B2 (en) * 2008-03-07 2014-03-19 サンケン電気株式会社 Bidirectional thyristor

Also Published As

Publication number Publication date
JPS6219079B2 (en) 1987-04-25

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