JPS53117962A - Production of gainsb mixed crystal thin film - Google Patents

Production of gainsb mixed crystal thin film

Info

Publication number
JPS53117962A
JPS53117962A JP3219077A JP3219077A JPS53117962A JP S53117962 A JPS53117962 A JP S53117962A JP 3219077 A JP3219077 A JP 3219077A JP 3219077 A JP3219077 A JP 3219077A JP S53117962 A JPS53117962 A JP S53117962A
Authority
JP
Japan
Prior art keywords
gainsb
mixed crystal
production
thin film
crystal thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3219077A
Other languages
Japanese (ja)
Inventor
Muneyasu Nakajima
Nobuo Kodera
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3219077A priority Critical patent/JPS53117962A/en
Publication of JPS53117962A publication Critical patent/JPS53117962A/en
Pending legal-status Critical Current

Links

Landscapes

  • Hall/Mr Elements (AREA)

Abstract

PURPOSE: To reduce noise voltages alone without decreasing Hall output and obtain a high SN ratio by zone-melting GaInSb mixed crystal film to be contacted with the substance containing Sb element and cause solid phase diffusion of Sb in GaInSb through suitable diffusion treatment.
COPYRIGHT: (C)1978,JPO&Japio
JP3219077A 1977-03-25 1977-03-25 Production of gainsb mixed crystal thin film Pending JPS53117962A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3219077A JPS53117962A (en) 1977-03-25 1977-03-25 Production of gainsb mixed crystal thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3219077A JPS53117962A (en) 1977-03-25 1977-03-25 Production of gainsb mixed crystal thin film

Publications (1)

Publication Number Publication Date
JPS53117962A true JPS53117962A (en) 1978-10-14

Family

ID=12351974

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3219077A Pending JPS53117962A (en) 1977-03-25 1977-03-25 Production of gainsb mixed crystal thin film

Country Status (1)

Country Link
JP (1) JPS53117962A (en)

Similar Documents

Publication Publication Date Title
JPS52113758A (en) Electro-optical device
JPS53117962A (en) Production of gainsb mixed crystal thin film
JPS5219865A (en) Rotational amount changing mechanism
JPS5315299A (en) Liquid-phase epitaxial growth method of electrooptical crystals
JPS52132787A (en) Hall element
JPS5289083A (en) Production of semiconductor photoelectric converting element
JPS51146661A (en) Step-down or step-up device on the same center axis
JPS5238258A (en) Digital electronic watch
JPS543484A (en) Manufacture of cdse conductive film
JPS52151141A (en) Preparation of 4-hydroxysalicylic acid anilide
JPS53123678A (en) Manufacture of field effect semiconductor device of insulation gate type
JPS52137535A (en) Carburetor
JPS527660A (en) Modulation circuit
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS52130670A (en) Electronic clock
JPS531412A (en) Mixer circuit
JPS521367A (en) Change gear device of multiple stage planetary gear
JPS53118988A (en) Integrated circuit device and its manufacture
JPS52110569A (en) Manufacture of insb thin film
JPS5211728A (en) Memory device with stratum composition
JPS5384690A (en) Field effect transistor
JPS531467A (en) Diffusing method
JPS5274767A (en) Speed changing device
JPS51150962A (en) Analog output apparatus
JPS5234667A (en) Semiconductor device