JPS53117342A - Memory unit - Google Patents

Memory unit

Info

Publication number
JPS53117342A
JPS53117342A JP3256477A JP3256477A JPS53117342A JP S53117342 A JPS53117342 A JP S53117342A JP 3256477 A JP3256477 A JP 3256477A JP 3256477 A JP3256477 A JP 3256477A JP S53117342 A JPS53117342 A JP S53117342A
Authority
JP
Japan
Prior art keywords
memory unit
unit
variation
operate
generating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3256477A
Other languages
Japanese (ja)
Inventor
Yoshinari Kitamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3256477A priority Critical patent/JPS53117342A/en
Publication of JPS53117342A publication Critical patent/JPS53117342A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To make it possible to operate the unit at a high speed and to reduce power consumption by generating a timing signals corresponding to the variation of an address input signal.
JP3256477A 1977-03-23 1977-03-23 Memory unit Pending JPS53117342A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3256477A JPS53117342A (en) 1977-03-23 1977-03-23 Memory unit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3256477A JPS53117342A (en) 1977-03-23 1977-03-23 Memory unit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP59041773A Division JPS59223997A (en) 1984-03-05 1984-03-05 Storage device

Publications (1)

Publication Number Publication Date
JPS53117342A true JPS53117342A (en) 1978-10-13

Family

ID=12362396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3256477A Pending JPS53117342A (en) 1977-03-23 1977-03-23 Memory unit

Country Status (1)

Country Link
JP (1) JPS53117342A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0096421A2 (en) * 1982-06-09 1983-12-21 Kabushiki Kaisha Toshiba Static memory device with signal transition detector
EP0105757A2 (en) * 1982-10-04 1984-04-18 Fujitsu Limited Asynchronous semiconductor memory device
JPS59186198A (en) * 1983-04-08 1984-10-22 Seiko Epson Corp Semiconductor storage device
JPS60245275A (en) * 1984-05-18 1985-12-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Memory array chip
JPS61134996A (en) * 1984-12-04 1986-06-23 Nec Corp Rom circuit
FR2578085A1 (en) * 1985-02-26 1986-08-29 Mitsubishi Electric Corp Semiconductor memory device
JPH07320493A (en) * 1993-12-22 1995-12-08 Sgs Thomson Microelectron Sa Integrated-circuit memory with improved access time
FR2724483A1 (en) * 1994-09-12 1996-03-15 Sgs Thomson Microelectronics ADDRESS DECODING METHOD IN INTEGRATED CIRCUIT MEMORY AND MEMORY CIRCUIT USING THE METHOD

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0096421A2 (en) * 1982-06-09 1983-12-21 Kabushiki Kaisha Toshiba Static memory device with signal transition detector
EP0105757A2 (en) * 1982-10-04 1984-04-18 Fujitsu Limited Asynchronous semiconductor memory device
JPS59186198A (en) * 1983-04-08 1984-10-22 Seiko Epson Corp Semiconductor storage device
JPS60245275A (en) * 1984-05-18 1985-12-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Memory array chip
JPH0411960B2 (en) * 1984-05-18 1992-03-03 Intaanashonaru Bijinesu Mashiinzu Corp
JPS61134996A (en) * 1984-12-04 1986-06-23 Nec Corp Rom circuit
FR2578085A1 (en) * 1985-02-26 1986-08-29 Mitsubishi Electric Corp Semiconductor memory device
JPH07320493A (en) * 1993-12-22 1995-12-08 Sgs Thomson Microelectron Sa Integrated-circuit memory with improved access time
FR2724483A1 (en) * 1994-09-12 1996-03-15 Sgs Thomson Microelectronics ADDRESS DECODING METHOD IN INTEGRATED CIRCUIT MEMORY AND MEMORY CIRCUIT USING THE METHOD
EP0703584A1 (en) * 1994-09-12 1996-03-27 STMicroelectronics S.A. Address decoding method for an integrated memory circuit and memory circuit using such a method

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