JPS53100757A - Super-high frequency semiconductor device - Google Patents

Super-high frequency semiconductor device

Info

Publication number
JPS53100757A
JPS53100757A JP1459877A JP1459877A JPS53100757A JP S53100757 A JPS53100757 A JP S53100757A JP 1459877 A JP1459877 A JP 1459877A JP 1459877 A JP1459877 A JP 1459877A JP S53100757 A JPS53100757 A JP S53100757A
Authority
JP
Japan
Prior art keywords
high frequency
super
semiconductor device
frequency semiconductor
pin diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1459877A
Other languages
Japanese (ja)
Inventor
Yutaka Iwata
Seiichi Takahashi
Katsuzo Uenishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP1459877A priority Critical patent/JPS53100757A/en
Priority to US05/880,158 priority patent/US4220874A/en
Publication of JPS53100757A publication Critical patent/JPS53100757A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/38—One-way transmission networks, i.e. unilines

Landscapes

  • Attenuators (AREA)
  • Electronic Switches (AREA)
  • Networks Using Active Elements (AREA)

Abstract

PURPOSE:To decrease the thickness of i-layer, to lower the driving power and to ensure a highly dependable switch operation at the super-high frequency band, by contriving the circuit so that the high frequency characteristics similar to the pin diode may be secured without using the pin diode.
JP1459877A 1977-02-15 1977-02-15 Super-high frequency semiconductor device Pending JPS53100757A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP1459877A JPS53100757A (en) 1977-02-15 1977-02-15 Super-high frequency semiconductor device
US05/880,158 US4220874A (en) 1977-02-15 1978-02-22 High frequency semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1459877A JPS53100757A (en) 1977-02-15 1977-02-15 Super-high frequency semiconductor device

Publications (1)

Publication Number Publication Date
JPS53100757A true JPS53100757A (en) 1978-09-02

Family

ID=11865614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1459877A Pending JPS53100757A (en) 1977-02-15 1977-02-15 Super-high frequency semiconductor device

Country Status (1)

Country Link
JP (1) JPS53100757A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5991043U (en) * 1982-12-11 1984-06-20 株式会社村田製作所 high frequency switch circuit
JPS62237807A (en) * 1986-04-08 1987-10-17 Nippon Dengiyou Kosaku Kk High frequency attenuation circuit
JPH01284008A (en) * 1988-05-11 1989-11-15 Nec Corp Variable attenuation circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5991043U (en) * 1982-12-11 1984-06-20 株式会社村田製作所 high frequency switch circuit
JPS62237807A (en) * 1986-04-08 1987-10-17 Nippon Dengiyou Kosaku Kk High frequency attenuation circuit
JPH01284008A (en) * 1988-05-11 1989-11-15 Nec Corp Variable attenuation circuit

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