JPS529648A - Method of selectively ionnetching silicon - Google Patents

Method of selectively ionnetching silicon

Info

Publication number
JPS529648A
JPS529648A JP7999576A JP7999576A JPS529648A JP S529648 A JPS529648 A JP S529648A JP 7999576 A JP7999576 A JP 7999576A JP 7999576 A JP7999576 A JP 7999576A JP S529648 A JPS529648 A JP S529648A
Authority
JP
Japan
Prior art keywords
ionnetching
selectively
silicon
selectively ionnetching
ionnetching silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7999576A
Other languages
English (en)
Other versions
JPS5814507B2 (ja
Inventor
Emu Haabiruchiyatsuku Jiyosefu
Shii Metsugaa Uiriamu
Raizuman Yakobu
Shii Shiyuwarutsu Jierarudein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS529648A publication Critical patent/JPS529648A/ja
Publication of JPS5814507B2 publication Critical patent/JPS5814507B2/ja
Expired legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP7999576A 1975-07-09 1976-07-07 シリコンを選択的にイオン食刻する方法 Expired JPS5814507B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59441875A 1975-07-09 1975-07-09

Publications (2)

Publication Number Publication Date
JPS529648A true JPS529648A (en) 1977-01-25
JPS5814507B2 JPS5814507B2 (ja) 1983-03-19

Family

ID=24378780

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7999576A Expired JPS5814507B2 (ja) 1975-07-09 1976-07-07 シリコンを選択的にイオン食刻する方法

Country Status (1)

Country Link
JP (1) JPS5814507B2 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105988A (en) * 1977-02-24 1978-09-14 Ibm Method of forming completely separated dielectric region
JPS53138942A (en) * 1977-05-06 1978-12-04 Texas Instruments Inc Anticorrosive method of silicon
JPS558021A (en) * 1978-07-03 1980-01-21 Nippon Telegr & Teleph Corp <Ntt> Light-receiving elementsigma isolation manufacturing method
JPS55107780A (en) * 1979-02-07 1980-08-19 Hitachi Ltd Etching method
JPS5748235A (en) * 1980-07-24 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
JPS6086285A (ja) * 1983-08-02 1985-05-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 銅のドライ・エツチング法
JPS63278339A (ja) * 1986-12-19 1988-11-16 アプライド　マテリアルズインコーポレーテッド シリコンおよび珪化物のための臭素およびヨウ素エッチング方法
JPH0286126A (ja) * 1988-07-11 1990-03-27 Philips Gloeilampenfab:Nv 臭化水素によるシリコンの反応性イオンエッチング
JPH03241830A (ja) * 1990-02-20 1991-10-29 Mitsubishi Electric Corp プラズマエッチングの方法
JPH05217956A (ja) * 1982-07-06 1993-08-27 Texas Instr Inc <Ti> 異方性プラズマエッチング方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59155608A (ja) * 1983-02-21 1984-09-04 Toyooki Kogyo Co Ltd 流体シリンダ装置
JPS6313902U (ja) * 1986-07-15 1988-01-29
JPS6365606U (ja) * 1986-10-20 1988-04-30
JPS6365605U (ja) * 1986-10-20 1988-04-30

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53105988A (en) * 1977-02-24 1978-09-14 Ibm Method of forming completely separated dielectric region
JPS53138942A (en) * 1977-05-06 1978-12-04 Texas Instruments Inc Anticorrosive method of silicon
JPS558021A (en) * 1978-07-03 1980-01-21 Nippon Telegr & Teleph Corp <Ntt> Light-receiving elementsigma isolation manufacturing method
JPS55107780A (en) * 1979-02-07 1980-08-19 Hitachi Ltd Etching method
JPS5637306B2 (ja) * 1979-02-07 1981-08-29
JPS5748235A (en) * 1980-07-24 1982-03-19 Fujitsu Ltd Manufacture of semiconductor device
JPH05217956A (ja) * 1982-07-06 1993-08-27 Texas Instr Inc <Ti> 異方性プラズマエッチング方法
JPS6086285A (ja) * 1983-08-02 1985-05-15 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 銅のドライ・エツチング法
JPS6140757B2 (ja) * 1983-08-02 1986-09-10 Intaanashonaru Bijinesu Mashiinzu Corp
JPS63278339A (ja) * 1986-12-19 1988-11-16 アプライド　マテリアルズインコーポレーテッド シリコンおよび珪化物のための臭素およびヨウ素エッチング方法
JPH0286126A (ja) * 1988-07-11 1990-03-27 Philips Gloeilampenfab:Nv 臭化水素によるシリコンの反応性イオンエッチング
JPH03241830A (ja) * 1990-02-20 1991-10-29 Mitsubishi Electric Corp プラズマエッチングの方法

Also Published As

Publication number Publication date
JPS5814507B2 (ja) 1983-03-19

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