JPS528734A - Differential sensing amplifier - Google Patents

Differential sensing amplifier

Info

Publication number
JPS528734A
JPS528734A JP51077944A JP7794476A JPS528734A JP S528734 A JPS528734 A JP S528734A JP 51077944 A JP51077944 A JP 51077944A JP 7794476 A JP7794476 A JP 7794476A JP S528734 A JPS528734 A JP S528734A
Authority
JP
Japan
Prior art keywords
sensing amplifier
differential sensing
differential
amplifier
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51077944A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5632717B2 (US06818201-20041116-C00086.png
Inventor
Baadaatsushiyaa Rojiyaa
Robaatsu Guregorii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS528734A publication Critical patent/JPS528734A/ja
Publication of JPS5632717B2 publication Critical patent/JPS5632717B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356017Bistable circuits using additional transistors in the input circuit
    • H03K3/356052Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419Read-write [R-W] circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356017Bistable circuits using additional transistors in the input circuit
    • H03K3/356034Bistable circuits using additional transistors in the input circuit the input circuit having a differential configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP51077944A 1975-07-02 1976-07-02 Differential sensing amplifier Granted JPS528734A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/592,706 US3983412A (en) 1975-07-02 1975-07-02 Differential sense amplifier

Publications (2)

Publication Number Publication Date
JPS528734A true JPS528734A (en) 1977-01-22
JPS5632717B2 JPS5632717B2 (US06818201-20041116-C00086.png) 1981-07-29

Family

ID=24371751

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51077944A Granted JPS528734A (en) 1975-07-02 1976-07-02 Differential sensing amplifier

Country Status (2)

Country Link
US (1) US3983412A (US06818201-20041116-C00086.png)
JP (1) JPS528734A (US06818201-20041116-C00086.png)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432236A (en) * 1977-08-17 1979-03-09 Mitsubishi Electric Corp Buffer circuit for output of static random access memory
JPS59139193A (ja) * 1984-02-02 1984-08-09 Hitachi Ltd メモリ装置
JPS6029111U (ja) * 1983-07-29 1985-02-27 株式会社 タカトリ機械製作所 パンテイストツキングの股上自動縫製機におけるストツキング生地の咬持装置
US5126974A (en) * 1989-01-20 1992-06-30 Hitachi, Ltd. Sense amplifier for a memory device

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4077031A (en) * 1976-08-23 1978-02-28 Texas Instruments Incorporated High speed address buffer for semiconductor memory
US4144590A (en) * 1976-12-29 1979-03-13 Texas Instruments Incorporated Intermediate output buffer circuit for semiconductor memory device
US4275387A (en) * 1978-01-12 1981-06-23 Fairchild Camera & Instrument Corp. Charge-coupled device serial analog-to-digital converter and associated conversion method
US4286178A (en) * 1978-06-12 1981-08-25 Texas Instruments Incorporated Sense amplifier with dual parallel driver transistors in MOS random access memory
US4208728A (en) * 1978-12-21 1980-06-17 Bell Telephone Laboratories, Incorporated Programable logic array
DE2926514A1 (de) * 1979-06-30 1981-01-15 Ibm Deutschland Elektrische speicheranordnung und verfahren zu ihrem betrieb
US4253163A (en) * 1979-10-09 1981-02-24 Bell Telephone Laboratories, Incorporated Sense amplifier-detector circuit
US4408133A (en) * 1981-03-30 1983-10-04 Gte Laboratories Incorporated Comparator circuit with improved reliability and/or speed
EP0084844B1 (en) * 1982-01-20 1986-07-16 Matsushita Electric Industrial Co., Ltd. Fet circuits
JPS5968889A (ja) * 1982-10-08 1984-04-18 Toshiba Corp 半導体記憶装置
JPS59186188A (ja) * 1983-04-07 1984-10-22 Fujitsu Ltd センス増幅器
US4494020A (en) * 1983-04-13 1985-01-15 Tokyo Shibaura Denki Kabushiki Kaisha High sensitivity sense amplifier using different threshold valued MOS devices
JPS6055615U (ja) * 1983-09-26 1985-04-18 ナショナル住宅産業株式会社 壁の構造
JPS61107594A (ja) * 1984-10-31 1986-05-26 Toshiba Corp センス増幅回路
US5278467A (en) * 1992-07-14 1994-01-11 Intel Corporation Self-biasing input stage for high-speed low-voltage communication
US5481500A (en) * 1994-07-22 1996-01-02 International Business Machines Corporation Precharged bit decoder and sense amplifier with integrated latch usable in pipelined memories
US5502407A (en) * 1994-12-02 1996-03-26 At&T Corp. Low-power-dissipation CMOS circuits
US5982690A (en) * 1998-04-15 1999-11-09 Cirrus Logic, Inc. Static low-power differential sense amplifier circuits, systems and methods
US7023243B2 (en) * 2002-05-08 2006-04-04 University Of Southern California Current source evaluation sense-amplifier

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3555307A (en) * 1967-10-16 1971-01-12 Hitachi Ltd Flip-flop
US3714471A (en) * 1971-11-24 1973-01-30 Microsystems Int Ltd Single-channel mis flip-flop circuit
JPS4897468A (US06818201-20041116-C00086.png) * 1972-03-27 1973-12-12
US3771147A (en) * 1972-12-04 1973-11-06 Bell Telephone Labor Inc Igfet memory system
US3838295A (en) * 1973-02-05 1974-09-24 Lockheed Electronics Co Ratioless mos sense amplifier

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5432236A (en) * 1977-08-17 1979-03-09 Mitsubishi Electric Corp Buffer circuit for output of static random access memory
JPS5920193B2 (ja) * 1977-08-17 1984-05-11 三菱電機株式会社 スタテイックランダムアクセスメモリの出力バッファ回路
JPS6029111U (ja) * 1983-07-29 1985-02-27 株式会社 タカトリ機械製作所 パンテイストツキングの股上自動縫製機におけるストツキング生地の咬持装置
JPS59139193A (ja) * 1984-02-02 1984-08-09 Hitachi Ltd メモリ装置
JPH0259559B2 (US06818201-20041116-C00086.png) * 1984-02-02 1990-12-12 Hitachi Ltd
US5126974A (en) * 1989-01-20 1992-06-30 Hitachi, Ltd. Sense amplifier for a memory device

Also Published As

Publication number Publication date
JPS5632717B2 (US06818201-20041116-C00086.png) 1981-07-29
US3983412A (en) 1976-09-28

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