JPS5279630A - Data processing unit - Google Patents

Data processing unit

Info

Publication number
JPS5279630A
JPS5279630A JP50156941A JP15694175A JPS5279630A JP S5279630 A JPS5279630 A JP S5279630A JP 50156941 A JP50156941 A JP 50156941A JP 15694175 A JP15694175 A JP 15694175A JP S5279630 A JPS5279630 A JP S5279630A
Authority
JP
Japan
Prior art keywords
memory
processing unit
data processing
memorizing
classifying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50156941A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5520320B2 (enExample
Inventor
Keikichi Tamaru
Yukimasa Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50156941A priority Critical patent/JPS5279630A/ja
Priority to GB3538176A priority patent/GB1537114A/en
Priority to DE19762638703 priority patent/DE2638703C3/de
Priority to US05/753,020 priority patent/US4122531A/en
Publication of JPS5279630A publication Critical patent/JPS5279630A/ja
Publication of JPS5520320B2 publication Critical patent/JPS5520320B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
  • Read Only Memory (AREA)
JP50156941A 1975-08-29 1975-12-25 Data processing unit Granted JPS5279630A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP50156941A JPS5279630A (en) 1975-12-25 1975-12-25 Data processing unit
GB3538176A GB1537114A (en) 1975-08-29 1976-08-25 Memory apparatus
DE19762638703 DE2638703C3 (de) 1975-08-29 1976-08-27 Speichervorrichtung mit direktem Zugriff
US05/753,020 US4122531A (en) 1975-12-25 1976-12-21 Memory and control circuit for the memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50156941A JPS5279630A (en) 1975-12-25 1975-12-25 Data processing unit

Publications (2)

Publication Number Publication Date
JPS5279630A true JPS5279630A (en) 1977-07-04
JPS5520320B2 JPS5520320B2 (enExample) 1980-06-02

Family

ID=15638683

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50156941A Granted JPS5279630A (en) 1975-08-29 1975-12-25 Data processing unit

Country Status (2)

Country Link
US (1) US4122531A (enExample)
JP (1) JPS5279630A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151697A (ja) * 1984-08-21 1986-03-14 Meidensha Electric Mfg Co Ltd 不揮発性メモリへのデ−タストア方法

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122043A (en) * 1978-03-15 1979-09-21 Toshiba Corp Electronic computer
US4968864A (en) * 1978-06-05 1990-11-06 Keiichiro Doi Magnetic card control microwave oven
US4345132A (en) * 1978-12-01 1982-08-17 Mitsubishi Denki Kabushiki Kaisha Cooking apparatus
US4291388A (en) * 1978-12-20 1981-09-22 Allen-Bradley Company Programmable controller with data archive
JPS60134953A (ja) * 1983-12-23 1985-07-18 Hitachi Ltd デ−タ転送制御装置
JPS6286407A (ja) * 1985-10-11 1987-04-20 Omron Tateisi Electronics Co プログラマブル・コントロ−ラ
US4924427A (en) * 1985-11-15 1990-05-08 Unisys Corporation Direct memory access controller with direct memory to memory transfers
US5155807A (en) * 1986-02-24 1992-10-13 International Business Machines Corporation Multi-processor communications channel utilizing random access/sequential access memories
US5680570A (en) * 1991-06-12 1997-10-21 Quantum Corporation Memory system with dynamically allocatable non-volatile storage capability
US5953513A (en) * 1992-07-09 1999-09-14 Hitachi, Ltd. Recording and reproducing device for recording and reproducing information from different kinds of storage media having different sector formats
US6347346B1 (en) * 1999-06-30 2002-02-12 Chameleon Systems, Inc. Local memory unit system with global access for use on reconfigurable chips
WO2007013154A1 (ja) * 2005-07-27 2007-02-01 Spansion Llc 半導体装置およびその制御方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3699535A (en) * 1971-02-01 1972-10-17 Raytheon Co Memory look-ahead connection arrangement for writing into an unoccupied address and prevention of reading out from an empty address
US3895360A (en) * 1974-01-29 1975-07-15 Westinghouse Electric Corp Block oriented random access memory
US3916390A (en) * 1974-12-31 1975-10-28 Ibm Dynamic memory with non-volatile back-up mode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151697A (ja) * 1984-08-21 1986-03-14 Meidensha Electric Mfg Co Ltd 不揮発性メモリへのデ−タストア方法

Also Published As

Publication number Publication date
US4122531A (en) 1978-10-24
JPS5520320B2 (enExample) 1980-06-02

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