JPS5260085A - Neutron detector - Google Patents

Neutron detector

Info

Publication number
JPS5260085A
JPS5260085A JP50135905A JP13590575A JPS5260085A JP S5260085 A JPS5260085 A JP S5260085A JP 50135905 A JP50135905 A JP 50135905A JP 13590575 A JP13590575 A JP 13590575A JP S5260085 A JPS5260085 A JP S5260085A
Authority
JP
Japan
Prior art keywords
neutron detector
detector
neutron
boron phosphide
alpha
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50135905A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5343032B2 (enrdf_load_stackoverflow
Inventor
Katsuto Nagano
Shozo Sasa
Takeshi Nakada
Kazuhiko Ihaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP50135905A priority Critical patent/JPS5260085A/ja
Publication of JPS5260085A publication Critical patent/JPS5260085A/ja
Publication of JPS5343032B2 publication Critical patent/JPS5343032B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation

Landscapes

  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
JP50135905A 1975-11-12 1975-11-12 Neutron detector Granted JPS5260085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50135905A JPS5260085A (en) 1975-11-12 1975-11-12 Neutron detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50135905A JPS5260085A (en) 1975-11-12 1975-11-12 Neutron detector

Publications (2)

Publication Number Publication Date
JPS5260085A true JPS5260085A (en) 1977-05-18
JPS5343032B2 JPS5343032B2 (enrdf_load_stackoverflow) 1978-11-16

Family

ID=15162557

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50135905A Granted JPS5260085A (en) 1975-11-12 1975-11-12 Neutron detector

Country Status (1)

Country Link
JP (1) JPS5260085A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785269A (en) * 1980-11-18 1982-05-27 Fuji Electric Co Ltd Semiconductor radiation detector
US5726453A (en) * 1996-09-30 1998-03-10 Westinghouse Electric Corporation Radiation resistant solid state neutron detector
KR20020073241A (ko) * 2001-03-13 2002-09-23 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
JPWO2009022377A1 (ja) * 2007-08-10 2010-11-11 学校法人 大阪電気通信大学 放射線検出素子用のシリコンカーバイド及び放射線検出方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5785269A (en) * 1980-11-18 1982-05-27 Fuji Electric Co Ltd Semiconductor radiation detector
US5726453A (en) * 1996-09-30 1998-03-10 Westinghouse Electric Corporation Radiation resistant solid state neutron detector
KR20020073241A (ko) * 2001-03-13 2002-09-23 미쓰비시덴키 가부시키가이샤 반도체 장치 및 그 제조 방법
JPWO2009022377A1 (ja) * 2007-08-10 2010-11-11 学校法人 大阪電気通信大学 放射線検出素子用のシリコンカーバイド及び放射線検出方法

Also Published As

Publication number Publication date
JPS5343032B2 (enrdf_load_stackoverflow) 1978-11-16

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