JPS5248949B2 - - Google Patents
Info
- Publication number
- JPS5248949B2 JPS5248949B2 JP49145599A JP14559974A JPS5248949B2 JP S5248949 B2 JPS5248949 B2 JP S5248949B2 JP 49145599 A JP49145599 A JP 49145599A JP 14559974 A JP14559974 A JP 14559974A JP S5248949 B2 JPS5248949 B2 JP S5248949B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49145599A JPS5248949B2 (US08088918-20120103-C00476.png) | 1974-12-20 | 1974-12-20 | |
| US05/639,713 US4013040A (en) | 1974-12-20 | 1975-12-11 | Apparatus for epitaxially growing a laminate semiconductor layer in liquid phase |
| GB51670/75A GB1495310A (en) | 1974-12-20 | 1975-12-17 | Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus of the same |
| DE2556928A DE2556928C3 (de) | 1974-12-20 | 1975-12-17 | Verfahren und Vorrichtung zum Züchten einer epitaktischen Halbleiterschicht in flüssiger Phase |
| CA242,234A CA1036272A (en) | 1974-12-20 | 1975-12-18 | Method of epitaxially growing a laminate semiconductor layer in liquid phase and apparatus for the same |
| NL7514816.A NL166074C (nl) | 1974-12-20 | 1975-12-19 | Inrichting voor het epitaxiaal uit vloeibare toestand neerslaan van meerdere halfgeleiderlaagjes op een substraat. |
| FR7539047A FR2295565A1 (fr) | 1974-12-20 | 1975-12-19 | Procede pour faire croitre de facon epitaxiale, en phase liquide, une couche semi-conductrice stratifiee et appareil pour mettre en oeuvre ce procede |
| US05/715,844 US4028148A (en) | 1974-12-20 | 1976-08-19 | Method of epitaxially growing a laminate semiconductor layer in liquid phase |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP49145599A JPS5248949B2 (US08088918-20120103-C00476.png) | 1974-12-20 | 1974-12-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5171882A JPS5171882A (US08088918-20120103-C00476.png) | 1976-06-22 |
| JPS5248949B2 true JPS5248949B2 (US08088918-20120103-C00476.png) | 1977-12-13 |
Family
ID=15388776
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP49145599A Expired JPS5248949B2 (US08088918-20120103-C00476.png) | 1974-12-20 | 1974-12-20 |
Country Status (7)
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51129882A (en) * | 1975-05-07 | 1976-11-11 | Nippon Telegr & Teleph Corp <Ntt> | Process for liquid phase epitaxial growth |
| JPS5556625A (en) * | 1978-10-20 | 1980-04-25 | Matsushita Electric Ind Co Ltd | Semiconductor crystal growing device |
| FR2470810A1 (fr) * | 1979-12-07 | 1981-06-12 | Labo Electronique Physique | Procede de fabrication de structures semi-conductrices par croissance epitaxiale en phase liquide et structures obtenues |
| FR2476690A1 (fr) * | 1980-02-27 | 1981-08-28 | Radiotechnique Compelec | Nacelle utilisable pour des depots epitaxiques en phase liquide et procede de depot mettant en jeu ladite nacelle |
| FR2481325A1 (fr) * | 1980-04-23 | 1981-10-30 | Radiotechnique Compelec | Nacelle utilisable pour des depots epitaxiques multicouches en phase liquide et procede de depot mettant en jeu ladite nacelle |
| DE3345214A1 (de) * | 1983-12-14 | 1985-06-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Diode |
| DE3427056A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
| US5264190A (en) * | 1990-04-19 | 1993-11-23 | Mitsubishi Denki Kabushiki Kaisha | Liquid phase epitaxial film growth apparatus |
| DE102021123241A1 (de) * | 2021-09-08 | 2023-03-09 | Tdk Electronics Ag | Verfahren zum Aufbringen einer Beschichtung auf mindestens ein elektronisches Bauteil und Sensoranordnung mit einer Beschichtung |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3665888A (en) * | 1970-03-16 | 1972-05-30 | Bell Telephone Labor Inc | Horizontal liquid phase crystal growth apparatus |
| US3767481A (en) * | 1972-04-07 | 1973-10-23 | Rca Corp | Method for epitaxially growing layers of a semiconductor material from the liquid phase |
| US3755011A (en) * | 1972-06-01 | 1973-08-28 | Rca Corp | Method for depositing an epitaxial semiconductive layer from the liquid phase |
| US3821039A (en) * | 1973-03-22 | 1974-06-28 | Rca Corp | Method of epitaxially depositing a semiconductor material on a substrate |
| NL7306004A (US08088918-20120103-C00476.png) * | 1973-05-01 | 1974-11-05 |
-
1974
- 1974-12-20 JP JP49145599A patent/JPS5248949B2/ja not_active Expired
-
1975
- 1975-12-11 US US05/639,713 patent/US4013040A/en not_active Expired - Lifetime
- 1975-12-17 DE DE2556928A patent/DE2556928C3/de not_active Expired
- 1975-12-17 GB GB51670/75A patent/GB1495310A/en not_active Expired
- 1975-12-18 CA CA242,234A patent/CA1036272A/en not_active Expired
- 1975-12-19 FR FR7539047A patent/FR2295565A1/fr active Granted
- 1975-12-19 NL NL7514816.A patent/NL166074C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL166074C (nl) | 1981-06-15 |
| GB1495310A (en) | 1977-12-14 |
| US4013040A (en) | 1977-03-22 |
| FR2295565B1 (US08088918-20120103-C00476.png) | 1978-05-19 |
| JPS5171882A (US08088918-20120103-C00476.png) | 1976-06-22 |
| DE2556928B2 (de) | 1978-06-22 |
| CA1036272A (en) | 1978-08-08 |
| DE2556928A1 (de) | 1976-06-24 |
| NL7514816A (nl) | 1976-06-22 |
| NL166074B (nl) | 1981-01-15 |
| FR2295565A1 (fr) | 1976-07-16 |
| DE2556928C3 (de) | 1979-02-22 |
