JPS524781A - Semiconductor doping control method - Google Patents

Semiconductor doping control method

Info

Publication number
JPS524781A
JPS524781A JP8012075A JP8012075A JPS524781A JP S524781 A JPS524781 A JP S524781A JP 8012075 A JP8012075 A JP 8012075A JP 8012075 A JP8012075 A JP 8012075A JP S524781 A JPS524781 A JP S524781A
Authority
JP
Japan
Prior art keywords
control method
semiconductor doping
doping control
semiconductor
deinsity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8012075A
Other languages
Japanese (ja)
Inventor
Teruaki Motooka
Tadashi Fukuzawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8012075A priority Critical patent/JPS524781A/en
Publication of JPS524781A publication Critical patent/JPS524781A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

PURPOSE:To assure a correct control of semiconductor impurity deinsity by detecting doping gas density fluorescence method.
JP8012075A 1975-06-30 1975-06-30 Semiconductor doping control method Pending JPS524781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8012075A JPS524781A (en) 1975-06-30 1975-06-30 Semiconductor doping control method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8012075A JPS524781A (en) 1975-06-30 1975-06-30 Semiconductor doping control method

Publications (1)

Publication Number Publication Date
JPS524781A true JPS524781A (en) 1977-01-14

Family

ID=13709331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8012075A Pending JPS524781A (en) 1975-06-30 1975-06-30 Semiconductor doping control method

Country Status (1)

Country Link
JP (1) JPS524781A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387545A (en) * 1990-12-20 1995-02-07 Hitachi, Ltd. Impurity diffusion method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5387545A (en) * 1990-12-20 1995-02-07 Hitachi, Ltd. Impurity diffusion method

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