JPS5245629B2 - - Google Patents
Info
- Publication number
- JPS5245629B2 JPS5245629B2 JP48108340A JP10834073A JPS5245629B2 JP S5245629 B2 JPS5245629 B2 JP S5245629B2 JP 48108340 A JP48108340 A JP 48108340A JP 10834073 A JP10834073 A JP 10834073A JP S5245629 B2 JPS5245629 B2 JP S5245629B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Networks Using Active Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4429472A GB1435708A (en) | 1972-09-25 | 1972-09-25 | Charge amplifier defibrillators |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS49134253A JPS49134253A (enExample) | 1974-12-24 |
| JPS5245629B2 true JPS5245629B2 (enExample) | 1977-11-17 |
Family
ID=10432631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP48108340A Expired JPS5245629B2 (enExample) | 1972-09-25 | 1973-09-25 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3900743A (enExample) |
| JP (1) | JPS5245629B2 (enExample) |
| CA (1) | CA981796A (enExample) |
| DE (1) | DE2348246A1 (enExample) |
| FR (1) | FR2200682A1 (enExample) |
| GB (1) | GB1435708A (enExample) |
| NL (1) | NL7312811A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2539205A1 (de) * | 1975-09-03 | 1977-03-17 | Siemens Ag | Regenerierverstaerker fuer ladungsverschiebeanordnungen |
| DE2541686A1 (de) * | 1975-09-18 | 1977-03-24 | Siemens Ag | Regenerierschaltung fuer ladungsgekoppelte elemente |
| IT1073440B (it) * | 1975-09-22 | 1985-04-17 | Seiko Instr & Electronics | Circuito elevatore di tensione realizzato in mos-fet |
| FR2731569B1 (fr) * | 1995-03-07 | 1997-04-25 | Thomson Tubes Electroniques | Dispositif de recopie de tension a grande linearite |
| US8164362B2 (en) * | 2000-02-02 | 2012-04-24 | Broadcom Corporation | Single-ended sense amplifier with sample-and-hold reference |
| US8385498B2 (en) * | 2006-05-31 | 2013-02-26 | Kenet, Inc. | Boosted charge transfer circuit |
| CN106941342B (zh) * | 2017-05-17 | 2023-06-20 | 四川兴达明科机电工程有限公司 | 一种集成有电荷放大器的控制器 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL163392C (nl) * | 1966-10-25 | 1980-03-17 | Philips Nv | Condensatoroverlaadinrichting. |
| BE755785A (fr) * | 1969-09-06 | 1971-03-04 | Philips Nv | Memoire capacitive |
| US3789239A (en) * | 1971-07-12 | 1974-01-29 | Teletype Corp | Signal boost for shift register |
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1972
- 1972-09-25 GB GB4429472A patent/GB1435708A/en not_active Expired
-
1973
- 1973-08-31 US US393554A patent/US3900743A/en not_active Expired - Lifetime
- 1973-09-18 NL NL7312811A patent/NL7312811A/xx not_active Application Discontinuation
- 1973-09-18 CA CA181,307A patent/CA981796A/en not_active Expired
- 1973-09-25 DE DE19732348246 patent/DE2348246A1/de active Pending
- 1973-09-25 FR FR7334366A patent/FR2200682A1/fr not_active Withdrawn
- 1973-09-25 JP JP48108340A patent/JPS5245629B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3900743A (en) | 1975-08-19 |
| CA981796A (en) | 1976-01-13 |
| GB1435708A (en) | 1976-05-12 |
| FR2200682A1 (enExample) | 1974-04-19 |
| JPS49134253A (enExample) | 1974-12-24 |
| DE2348246A1 (de) | 1974-04-04 |
| NL7312811A (enExample) | 1974-03-27 |