JPS5242517B2 - - Google Patents
Info
- Publication number
- JPS5242517B2 JPS5242517B2 JP47102238A JP10223872A JPS5242517B2 JP S5242517 B2 JPS5242517 B2 JP S5242517B2 JP 47102238 A JP47102238 A JP 47102238A JP 10223872 A JP10223872 A JP 10223872A JP S5242517 B2 JPS5242517 B2 JP S5242517B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
- Y10T29/49103—Strain gauge making
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47102238A JPS5242517B2 (ja) | 1972-10-11 | 1972-10-11 | |
US00405534A US3848329A (en) | 1972-10-11 | 1973-10-11 | Method for producing a semiconductor strain sensitive element of an electromechanical semiconductor transducer |
FR7336322A FR2203172A1 (ja) | 1972-10-11 | 1973-10-11 | |
DE19732351112 DE2351112A1 (de) | 1972-10-11 | 1973-10-11 | Dehnungsempfindliches halbleiterbauelement fuer einen wandler zum umformen mechanischer spannungen bzw. verformungen in eine elektrische groesse und verfahren zur herstellung des halbleiterbauelements |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP47102238A JPS5242517B2 (ja) | 1972-10-11 | 1972-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS4960486A JPS4960486A (ja) | 1974-06-12 |
JPS5242517B2 true JPS5242517B2 (ja) | 1977-10-25 |
Family
ID=14322043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP47102238A Expired JPS5242517B2 (ja) | 1972-10-11 | 1972-10-11 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3848329A (ja) |
JP (1) | JPS5242517B2 (ja) |
DE (1) | DE2351112A1 (ja) |
FR (1) | FR2203172A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3935636A (en) * | 1974-03-29 | 1976-02-03 | Tyco Laboratories, Inc. | Method of making a pressure transducer |
JPS5546772B2 (ja) * | 1974-05-28 | 1980-11-26 | ||
US4093933A (en) * | 1976-05-14 | 1978-06-06 | Becton, Dickinson Electronics Company | Sculptured pressure diaphragm |
FR2380640A1 (fr) * | 1977-02-09 | 1978-09-08 | Diax Corp | Transducteur d'energie a l'etat solide et son procede de fabrication |
US4173900A (en) * | 1977-03-07 | 1979-11-13 | Hitachi, Ltd. | Semiconductor pressure transducer |
DE68908934T2 (de) * | 1988-04-15 | 1994-06-01 | Honeywell Inc | Halbleiter-Druckwandler. |
JP3891037B2 (ja) * | 2002-05-21 | 2007-03-07 | 株式会社デンソー | 半導体圧力センサおよび半導体圧力センサ用の半導体ウェハ |
EP1788371A1 (en) * | 2004-07-14 | 2007-05-23 | Nagano Keiki Co., Ltd. | Load sensor and manufacturing method of the same |
US20060030062A1 (en) * | 2004-08-05 | 2006-02-09 | Jun He | Micromachined wafer strain gauge |
US7412892B1 (en) | 2007-06-06 | 2008-08-19 | Measurement Specialties, Inc. | Method of making pressure transducer and apparatus |
JP7157019B2 (ja) * | 2019-08-07 | 2022-10-19 | 株式会社東芝 | 圧力センサ |
JP7343343B2 (ja) * | 2019-09-25 | 2023-09-12 | 愛知時計電機株式会社 | センサチップ |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3428933A (en) * | 1966-08-29 | 1969-02-18 | Automation Ind Inc | Strain gage unit and method of applying the gage |
US3757414A (en) * | 1971-03-26 | 1973-09-11 | Honeywell Inc | Method for batch fabricating semiconductor devices |
US3798754A (en) * | 1972-05-15 | 1974-03-26 | Motorola Inc | Semiconductor strain gage and method of fabricating same |
-
1972
- 1972-10-11 JP JP47102238A patent/JPS5242517B2/ja not_active Expired
-
1973
- 1973-10-11 FR FR7336322A patent/FR2203172A1/fr not_active Withdrawn
- 1973-10-11 US US00405534A patent/US3848329A/en not_active Expired - Lifetime
- 1973-10-11 DE DE19732351112 patent/DE2351112A1/de active Pending
Also Published As
Publication number | Publication date |
---|---|
JPS4960486A (ja) | 1974-06-12 |
FR2203172A1 (ja) | 1974-05-10 |
US3848329A (en) | 1974-11-19 |
DE2351112A1 (de) | 1974-04-18 |