JPS5241587A - Secondary ion forming device - Google Patents

Secondary ion forming device

Info

Publication number
JPS5241587A
JPS5241587A JP50113687A JP11368775A JPS5241587A JP S5241587 A JPS5241587 A JP S5241587A JP 50113687 A JP50113687 A JP 50113687A JP 11368775 A JP11368775 A JP 11368775A JP S5241587 A JPS5241587 A JP S5241587A
Authority
JP
Japan
Prior art keywords
secondary ion
ion forming
forming device
electrodes
placing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50113687A
Other languages
Japanese (ja)
Inventor
Toru Ishitani
Hifumi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50113687A priority Critical patent/JPS5241587A/en
Publication of JPS5241587A publication Critical patent/JPS5241587A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion

Abstract

PURPOSE:To increase the rate of secondary ionization and improve analysis sensitivity by placing a sample between two electrodes and applying a magnetic field to secondary ion forming part.
JP50113687A 1975-09-22 1975-09-22 Secondary ion forming device Pending JPS5241587A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50113687A JPS5241587A (en) 1975-09-22 1975-09-22 Secondary ion forming device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50113687A JPS5241587A (en) 1975-09-22 1975-09-22 Secondary ion forming device

Publications (1)

Publication Number Publication Date
JPS5241587A true JPS5241587A (en) 1977-03-31

Family

ID=14618626

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50113687A Pending JPS5241587A (en) 1975-09-22 1975-09-22 Secondary ion forming device

Country Status (1)

Country Link
JP (1) JPS5241587A (en)

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