JPS5239386A - Method of producing ic - Google Patents

Method of producing ic

Info

Publication number
JPS5239386A
JPS5239386A JP51113195A JP11319576A JPS5239386A JP S5239386 A JPS5239386 A JP S5239386A JP 51113195 A JP51113195 A JP 51113195A JP 11319576 A JP11319576 A JP 11319576A JP S5239386 A JPS5239386 A JP S5239386A
Authority
JP
Japan
Prior art keywords
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51113195A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5415754B2 (member.php
Inventor
Boraata Buurumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Signetics Corp
Original Assignee
Signetics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Signetics Corp filed Critical Signetics Corp
Publication of JPS5239386A publication Critical patent/JPS5239386A/ja
Publication of JPS5415754B2 publication Critical patent/JPS5415754B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P30/204—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H10P30/212—
    • H10W15/00—
    • H10W15/01—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/003—Anneal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/039—Displace P-N junction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/145—Shaped junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/938—Lattice strain control or utilization

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
JP51113195A 1975-09-22 1976-09-22 Method of producing ic Granted JPS5239386A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/615,481 US3976512A (en) 1975-09-22 1975-09-22 Method for reducing the defect density of an integrated circuit utilizing ion implantation

Publications (2)

Publication Number Publication Date
JPS5239386A true JPS5239386A (en) 1977-03-26
JPS5415754B2 JPS5415754B2 (member.php) 1979-06-16

Family

ID=24465561

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51113195A Granted JPS5239386A (en) 1975-09-22 1976-09-22 Method of producing ic

Country Status (6)

Country Link
US (1) US3976512A (member.php)
JP (1) JPS5239386A (member.php)
CA (1) CA1046168A (member.php)
DE (1) DE2641024A1 (member.php)
FR (1) FR2325190A1 (member.php)
GB (1) GB1551129A (member.php)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136237A (ja) * 1983-12-19 1985-07-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体素子の形成方法
JP2019062139A (ja) * 2017-09-28 2019-04-18 豊田合成株式会社 半導体装置の製造方法

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4262056A (en) * 1978-09-15 1981-04-14 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted multilayer optical interference filter
JPS5617011A (en) * 1979-07-23 1981-02-18 Toshiba Corp Semiconductor device and manufacture thereof
NL188432C (nl) * 1980-12-26 1992-06-16 Nippon Telegraph & Telephone Werkwijze voor het vervaardigen van een mosfet.
US4416708A (en) * 1982-01-15 1983-11-22 International Rectifier Corporation Method of manufacture of high speed, high power bipolar transistor
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
US4548658A (en) * 1985-01-30 1985-10-22 Cook Melvin S Growth of lattice-graded epilayers
US4644383A (en) * 1985-04-08 1987-02-17 Harris Corporation Subcollector for oxide and junction isolated IC's
US4695868A (en) * 1985-12-13 1987-09-22 Rca Corporation Patterned metallization for integrated circuits
US5156995A (en) * 1988-04-01 1992-10-20 Cornell Research Foundation, Inc. Method for reducing or eliminating interface defects in mismatched semiconductor epilayers
US5250445A (en) * 1988-12-20 1993-10-05 Texas Instruments Incorporated Discretionary gettering of semiconductor circuits
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
EP0584436A1 (en) * 1992-08-26 1994-03-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for forming buried regions, having different doping concentration, in monolitic semiconductor devices
US6316336B1 (en) * 1999-03-01 2001-11-13 Richard A. Blanchard Method for forming buried layers with top-side contacts and the resulting structure
DE102004051081A1 (de) * 2004-10-19 2006-04-27 Austriamicrosystems Ag JFET und Herstellungsverfahren
TW201029073A (en) * 2009-01-21 2010-08-01 Univ Nat Chunghsing Epitaxial wafer with low surface defect density

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL297820A (member.php) * 1962-10-05
US3283223A (en) * 1963-12-27 1966-11-01 Ibm Transistor and method of fabrication to minimize surface recombination effects
FR1495766A (member.php) * 1965-12-10 1967-12-20
US3510736A (en) * 1967-11-17 1970-05-05 Rca Corp Integrated circuit planar transistor
NL6911771A (member.php) * 1968-08-14 1970-02-17
US3600241A (en) * 1968-09-09 1971-08-17 Ibm Method of fabricating semiconductor devices by diffusion
US3717790A (en) * 1971-06-24 1973-02-20 Bell Telephone Labor Inc Ion implanted silicon diode array targets for electron beam camera tubes
US3902926A (en) * 1974-02-21 1975-09-02 Signetics Corp Method of making an ion implanted resistor
NL163898C (nl) * 1974-03-16 1980-10-15 Nippon Musical Instruments Mfg Werkwijze voor het vervaardigen van een veldeffect- transistor met onverzadigde stroom-spanningskarakteri- stieken.
US3916431A (en) * 1974-06-21 1975-10-28 Rca Corp Bipolar integrated circuit transistor with lightly doped subcollector core

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60136237A (ja) * 1983-12-19 1985-07-19 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 半導体素子の形成方法
JP2019062139A (ja) * 2017-09-28 2019-04-18 豊田合成株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2325190A1 (fr) 1977-04-15
DE2641024A1 (de) 1977-03-31
GB1551129A (en) 1979-08-22
US3976512A (en) 1976-08-24
JPS5415754B2 (member.php) 1979-06-16
CA1046168A (en) 1979-01-09

Similar Documents

Publication Publication Date Title
JPS525288A (en) Method of producing ic device
JPS525286A (en) Method of producing ic device
JPS532091A (en) Selffarraying method of producing ic
JPS5248983A (en) Method of producing electronic device
JPS525289A (en) Method of producing ic device
JPS528784A (en) Method of producing bipolar ic
JPS51124386A (en) Method of producing ic
CS188263B2 (en) Method of producing new biphenyloxyderivatives
JPS5239386A (en) Method of producing ic
CS189737B2 (en) Method of producing new trichlormethylamidines
CS188132B2 (en) Method of producing novel substituted n-benzylthioureas
CS188131B2 (en) Method of producing novel o-hydroxybutyrophenone derivatives
JPS52119086A (en) Method of forming ic
JPS51146407A (en) Method of producing 22aminoonnbutanol
JPS51127172A (en) Method of producing card
JPS5253807A (en) Method of producing 22aminoo11alcohol
JPS51138618A (en) Method of producing iminodiacetonitlile
JPS5415668A (en) Method of producing semiconductor
JPS52138885A (en) Method of producing ic
CH612117A5 (en) Method of producing sawn-timber elements
JPS5283080A (en) Ic and method of producing same
JPS5250560A (en) Method of forming throughhhole
JPS5236616A (en) Method of producing 22chloroalkanal
JPS5262656A (en) Method of producing integrated circuit
JPS51128936A (en) Novel method of producing salycylaniride