JPS5238388B2 - - Google Patents

Info

Publication number
JPS5238388B2
JPS5238388B2 JP50110532A JP11053275A JPS5238388B2 JP S5238388 B2 JPS5238388 B2 JP S5238388B2 JP 50110532 A JP50110532 A JP 50110532A JP 11053275 A JP11053275 A JP 11053275A JP S5238388 B2 JPS5238388 B2 JP S5238388B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50110532A
Other languages
Japanese (ja)
Other versions
JPS5164371A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5164371A publication Critical patent/JPS5164371A/ja
Publication of JPS5238388B2 publication Critical patent/JPS5238388B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP50110532A 1974-09-16 1975-09-13 Expired JPS5238388B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431243A FR2284982A1 (fr) 1974-09-16 1974-09-16 Procede de diffusion d'impuretes dans des corps semiconducteurs

Publications (2)

Publication Number Publication Date
JPS5164371A JPS5164371A (https=) 1976-06-03
JPS5238388B2 true JPS5238388B2 (https=) 1977-09-28

Family

ID=9143118

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50110532A Expired JPS5238388B2 (https=) 1974-09-16 1975-09-13

Country Status (5)

Country Link
JP (1) JPS5238388B2 (https=)
CA (1) CA1061225A (https=)
DE (1) DE2540053C2 (https=)
FR (1) FR2284982A1 (https=)
GB (1) GB1515318A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236471A (ja) * 1984-05-10 1985-11-25 新光電気工業株式会社 気密ガラス端子

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742008Y2 (https=) * 1976-10-08 1982-09-16
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices
FR2479278A1 (fr) * 1980-03-26 1981-10-02 Loic Henry Procede de diffusion d'impuretes dans un semiconducteur et dispositif pour la mise en oeuvre de ce procede
JP2662318B2 (ja) * 1991-03-13 1997-10-08 株式会社日立製作所 半導体基体への不純物の拡散方法
IL313542A (en) * 2021-12-20 2024-08-01 Hpsp Co Ltd A method for contaminating a thin layer on a silicon wafer with carbon
CN114855261B (zh) * 2022-03-21 2025-01-24 西北工业大学 一种基于水平梯度凝固法生长化合物半导体单晶的气相掺杂方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2178751B1 (https=) * 1972-04-05 1974-10-18 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60236471A (ja) * 1984-05-10 1985-11-25 新光電気工業株式会社 気密ガラス端子

Also Published As

Publication number Publication date
DE2540053A1 (de) 1976-03-25
CA1061225A (en) 1979-08-28
FR2284982B1 (https=) 1979-02-16
GB1515318A (en) 1978-06-21
JPS5164371A (https=) 1976-06-03
FR2284982A1 (fr) 1976-04-09
DE2540053C2 (de) 1983-12-01

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