US4007476A
(en)
*
|
1975-04-21 |
1977-02-08 |
Hutson Jearld L |
Technique for passivating semiconductor devices
|
CN1244891C
(zh)
*
|
1992-08-27 |
2006-03-08 |
株式会社半导体能源研究所 |
有源矩阵显示器
|
JP3497198B2
(ja)
|
1993-02-03 |
2004-02-16 |
株式会社半導体エネルギー研究所 |
半導体装置および薄膜トランジスタの作製方法
|
US5843225A
(en)
*
|
1993-02-03 |
1998-12-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Process for fabricating semiconductor and process for fabricating semiconductor device
|
US5639698A
(en)
*
|
1993-02-15 |
1997-06-17 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
|
US5985741A
(en)
*
|
1993-02-15 |
1999-11-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method of fabricating the same
|
US6997985B1
(en)
|
1993-02-15 |
2006-02-14 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor, semiconductor device, and method for fabricating the same
|
US6413805B1
(en)
|
1993-03-12 |
2002-07-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device forming method
|
US6875628B1
(en)
*
|
1993-05-26 |
2005-04-05 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and fabrication method of the same
|
JP3450376B2
(ja)
|
1993-06-12 |
2003-09-22 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
TW264575B
(ja)
*
|
1993-10-29 |
1995-12-01 |
Handotai Energy Kenkyusho Kk |
|
US5923962A
(en)
*
|
1993-10-29 |
1999-07-13 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing a semiconductor device
|
CN1328761C
(zh)
|
1993-12-02 |
2007-07-25 |
株式会社半导体能源研究所 |
半导体器件的制造方法
|
US5869362A
(en)
*
|
1993-12-02 |
1999-02-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing semiconductor device
|
JP2860869B2
(ja)
*
|
1993-12-02 |
1999-02-24 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
US6798023B1
(en)
|
1993-12-02 |
2004-09-28 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising first insulating film, second insulating film comprising organic resin on the first insulating film, and pixel electrode over the second insulating film
|
TW272319B
(ja)
*
|
1993-12-20 |
1996-03-11 |
Sharp Kk |
|
KR100319332B1
(ko)
*
|
1993-12-22 |
2002-04-22 |
야마자끼 순페이 |
반도체장치및전자광학장치
|
US6884698B1
(en)
|
1994-02-23 |
2005-04-26 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for manufacturing semiconductor device with crystallization of amorphous silicon
|
US5915174A
(en)
*
|
1994-09-30 |
1999-06-22 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for producing the same
|
TW297950B
(ja)
*
|
1994-12-16 |
1997-02-11 |
Handotai Energy Kenkyusho Kk |
|
JP3645378B2
(ja)
|
1996-01-19 |
2005-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
JP3645379B2
(ja)
*
|
1996-01-19 |
2005-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US5985740A
(en)
|
1996-01-19 |
1999-11-16 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device including reduction of a catalyst
|
JP3645380B2
(ja)
|
1996-01-19 |
2005-05-11 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
|
JP3729955B2
(ja)
|
1996-01-19 |
2005-12-21 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US6478263B1
(en)
|
1997-01-17 |
2002-11-12 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and its manufacturing method
|
US5888858A
(en)
|
1996-01-20 |
1999-03-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and fabrication method thereof
|
US6180439B1
(en)
|
1996-01-26 |
2001-01-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating a semiconductor device
|
US7056381B1
(en)
*
|
1996-01-26 |
2006-06-06 |
Semiconductor Energy Laboratory Co., Ltd. |
Fabrication method of semiconductor device
|
US6465287B1
(en)
|
1996-01-27 |
2002-10-15 |
Semiconductor Energy Laboratory Co., Ltd. |
Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
|
US6100562A
(en)
|
1996-03-17 |
2000-08-08 |
Semiconductor Energy Laboratory Co., Ltd. |
Method of manufacturing a semiconductor device
|
US5859465A
(en)
*
|
1996-10-15 |
1999-01-12 |
International Rectifier Corporation |
High voltage power schottky with aluminum barrier metal spaced from first diffused ring
|
US6501094B1
(en)
*
|
1997-06-11 |
2002-12-31 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device comprising a bottom gate type thin film transistor
|
JP6800748B2
(ja)
|
2013-06-14 |
2020-12-16 |
アカマラ セラピューティクス、インコーポレイテッド |
脂質ベース白金化合物およびナノ粒子
|