JPS5231675A - Semiconductor rectifier - Google Patents
Semiconductor rectifierInfo
- Publication number
- JPS5231675A JPS5231675A JP9310975A JP9310975A JPS5231675A JP S5231675 A JPS5231675 A JP S5231675A JP 9310975 A JP9310975 A JP 9310975A JP 9310975 A JP9310975 A JP 9310975A JP S5231675 A JPS5231675 A JP S5231675A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor rectifier
- impurity
- resistance
- produce
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9310975A JPS5231675A (en) | 1975-08-01 | 1975-08-01 | Semiconductor rectifier |
DE19762634155 DE2634155B2 (de) | 1975-08-01 | 1976-07-29 | Halbleiter-Gleichrichter und Verfahren zu seiner Herstellung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9310975A JPS5231675A (en) | 1975-08-01 | 1975-08-01 | Semiconductor rectifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5231675A true JPS5231675A (en) | 1977-03-10 |
JPS5513595B2 JPS5513595B2 (ja) | 1980-04-10 |
Family
ID=14073347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9310975A Granted JPS5231675A (en) | 1975-08-01 | 1975-08-01 | Semiconductor rectifier |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPS5231675A (ja) |
DE (1) | DE2634155B2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720734A (en) * | 1981-09-11 | 1988-01-19 | Nippon Telegraph And Telephone Public Corporation | Low loss and high speed diodes |
US5063428A (en) * | 1986-09-30 | 1991-11-05 | eupec Europaische Gesellschaft fur Leistungshalbleiter mbH & Co. KG | Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone |
JPH0622629A (ja) * | 1993-06-29 | 1994-02-01 | Iseki & Co Ltd | コンバインのアタッチメント操作装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0770476B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 半導体装置の製造方法 |
-
1975
- 1975-08-01 JP JP9310975A patent/JPS5231675A/ja active Granted
-
1976
- 1976-07-29 DE DE19762634155 patent/DE2634155B2/de not_active Ceased
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4720734A (en) * | 1981-09-11 | 1988-01-19 | Nippon Telegraph And Telephone Public Corporation | Low loss and high speed diodes |
US5063428A (en) * | 1986-09-30 | 1991-11-05 | eupec Europaische Gesellschaft fur Leistungshalbleiter mbH & Co. KG | Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone |
JPH0622629A (ja) * | 1993-06-29 | 1994-02-01 | Iseki & Co Ltd | コンバインのアタッチメント操作装置 |
Also Published As
Publication number | Publication date |
---|---|
DE2634155A1 (de) | 1977-02-10 |
JPS5513595B2 (ja) | 1980-04-10 |
DE2634155B2 (de) | 1980-10-30 |
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