JPS5229187A - Method for production of polycrystalline semiconductor film - Google Patents
Method for production of polycrystalline semiconductor filmInfo
- Publication number
- JPS5229187A JPS5229187A JP50104949A JP10494975A JPS5229187A JP S5229187 A JPS5229187 A JP S5229187A JP 50104949 A JP50104949 A JP 50104949A JP 10494975 A JP10494975 A JP 10494975A JP S5229187 A JPS5229187 A JP S5229187A
- Authority
- JP
- Japan
- Prior art keywords
- production
- semiconductor film
- polycrystalline semiconductor
- earch
- photoelectric conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50104949A JPS5229187A (en) | 1975-09-01 | 1975-09-01 | Method for production of polycrystalline semiconductor film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50104949A JPS5229187A (en) | 1975-09-01 | 1975-09-01 | Method for production of polycrystalline semiconductor film |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5229187A true JPS5229187A (en) | 1977-03-04 |
JPS5339317B2 JPS5339317B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-10-20 |
Family
ID=14394338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50104949A Granted JPS5229187A (en) | 1975-09-01 | 1975-09-01 | Method for production of polycrystalline semiconductor film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5229187A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
-
1975
- 1975-09-01 JP JP50104949A patent/JPS5229187A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5339317B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1978-10-20 |
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