JPS5226522B2 - - Google Patents

Info

Publication number
JPS5226522B2
JPS5226522B2 JP48129304A JP12930473A JPS5226522B2 JP S5226522 B2 JPS5226522 B2 JP S5226522B2 JP 48129304 A JP48129304 A JP 48129304A JP 12930473 A JP12930473 A JP 12930473A JP S5226522 B2 JPS5226522 B2 JP S5226522B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48129304A
Other languages
Japanese (ja)
Other versions
JPS4987717A (en:Method
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4987717A publication Critical patent/JPS4987717A/ja
Publication of JPS5226522B2 publication Critical patent/JPS5226522B2/ja
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/20—Uniting glass pieces by fusing without substantial reshaping
    • C03B23/207—Uniting glass rods, glass tubes, or hollow glassware
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
JP48129304A 1972-12-04 1973-11-19 Expired JPS5226522B2 (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2259353A DE2259353C3 (de) 1972-12-04 1972-12-04 Tiegel aus Quarzglas oder Quarzgut zur Verwendung beim Züchten von Einkristallen

Publications (2)

Publication Number Publication Date
JPS4987717A JPS4987717A (en:Method) 1974-08-22
JPS5226522B2 true JPS5226522B2 (en:Method) 1977-07-14

Family

ID=5863496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48129304A Expired JPS5226522B2 (en:Method) 1972-12-04 1973-11-19

Country Status (7)

Country Link
US (1) US4019645A (en:Method)
JP (1) JPS5226522B2 (en:Method)
CH (1) CH565118A5 (en:Method)
DE (1) DE2259353C3 (en:Method)
FR (1) FR2208849B1 (en:Method)
GB (1) GB1411680A (en:Method)
NL (1) NL7316010A (en:Method)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2908288B1 (de) * 1979-03-03 1980-01-17 Heraeus Schott Quarzschmelze Glocke aus Quarzglas fuer halbleitertechnologische Zwecke
JPH0441186Y2 (en:Method) * 1986-03-31 1992-09-28
JPH0733305B2 (ja) * 1987-03-20 1995-04-12 三菱マテリアル株式会社 石英製二重ルツボの製造方法
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
JP5047227B2 (ja) * 2009-05-27 2012-10-10 ジャパンスーパークォーツ株式会社 シリコン単結晶の製造方法及びシリコン単結晶引き上げ装置
US8857214B2 (en) * 2011-11-18 2014-10-14 Sunedison Semiconductor Limited Methods for producing crucibles with a reduced amount of bubbles
US8524319B2 (en) 2011-11-18 2013-09-03 Memc Electronic Materials, Inc. Methods for producing crucibles with a reduced amount of bubbles
JP6752464B1 (ja) * 2019-06-27 2020-09-09 Ｆｔｂ研究所株式会社 ルツボ

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1624699A (en) * 1926-11-03 1927-04-12 Gen Electric Silica receptacle and process of manufacture
US2565061A (en) * 1946-12-14 1951-08-21 Becton Dickinson Co Method of forming a tubular glass ampoule having a central transverse partition
US2822646A (en) * 1955-03-30 1958-02-11 Hanovia Chemical & Mfg Co Method of manufacture of a lamp envelope
DE1127042B (de) * 1959-09-14 1962-04-05 Rota Patent A G Verfahren und Einrichtung zur Herstellung von fremdkoerperfreien Glasgefaessen, insbesondere Ampullen, Injektionsflaschen u. dgl., aus Glasroehren
US3203779A (en) * 1963-07-01 1965-08-31 Owens Illinois Glass Co Method for forming flat bottom glass beakers
NL6917398A (en:Method) * 1969-03-18 1970-09-22
US3694165A (en) * 1970-08-11 1972-09-26 Monsanto Co Crucible apparatus for a semiconductor crystal puller
US3795488A (en) * 1971-02-01 1974-03-05 Gen Electric Method for producing crystal boules with extensive flat, parallel facets

Also Published As

Publication number Publication date
FR2208849A1 (en:Method) 1974-06-28
GB1411680A (en) 1975-10-29
DE2259353B2 (de) 1974-12-05
DE2259353C3 (de) 1975-07-10
CH565118A5 (en:Method) 1975-08-15
FR2208849B1 (en:Method) 1980-04-11
JPS4987717A (en:Method) 1974-08-22
US4019645A (en) 1977-04-26
DE2259353A1 (de) 1974-06-27
NL7316010A (en:Method) 1974-06-06

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