JPS522272B2 - - Google Patents

Info

Publication number
JPS522272B2
JPS522272B2 JP49037069A JP3706974A JPS522272B2 JP S522272 B2 JPS522272 B2 JP S522272B2 JP 49037069 A JP49037069 A JP 49037069A JP 3706974 A JP3706974 A JP 3706974A JP S522272 B2 JPS522272 B2 JP S522272B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49037069A
Other languages
Japanese (ja)
Other versions
JPS5011391A (enExample
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5011391A publication Critical patent/JPS5011391A/ja
Publication of JPS522272B2 publication Critical patent/JPS522272B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/60Electrodes characterised by their materials
    • H10D64/66Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
JP49037069A 1973-05-03 1974-04-03 Expired JPS522272B2 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704673A 1973-05-03 1973-05-03

Publications (2)

Publication Number Publication Date
JPS5011391A JPS5011391A (enExample) 1975-02-05
JPS522272B2 true JPS522272B2 (enExample) 1977-01-20

Family

ID=23404079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49037069A Expired JPS522272B2 (enExample) 1973-05-03 1974-04-03

Country Status (6)

Country Link
JP (1) JPS522272B2 (enExample)
CA (1) CA1017462A (enExample)
DE (1) DE2419704A1 (enExample)
FR (1) FR2228301B1 (enExample)
GB (1) GB1452805A (enExample)
IT (1) IT1006474B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396686B (zh) 2004-05-21 2013-05-21 Takeda Pharmaceutical 環狀醯胺衍生物、以及其製品和用法
JP5943065B2 (ja) * 2012-03-05 2016-06-29 株式会社村田製作所 接合方法、電子装置の製造方法、および電子部品

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (enExample) * 1963-06-28
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3632438A (en) * 1967-09-29 1972-01-04 Texas Instruments Inc Method for increasing the stability of semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PROCEEDING OF 3RD CORFENCE ON SOLID STATE DEVICE TOKYO 1971=1971 *

Also Published As

Publication number Publication date
FR2228301A1 (enExample) 1974-11-29
JPS5011391A (enExample) 1975-02-05
DE2419704A1 (de) 1974-11-21
CA1017462A (en) 1977-09-13
FR2228301B1 (enExample) 1977-10-14
GB1452805A (en) 1976-10-20
IT1006474B (it) 1976-09-30

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