JPS52183A - Method of producing cmos semiconductor element - Google Patents
Method of producing cmos semiconductor elementInfo
- Publication number
- JPS52183A JPS52183A JP51064454A JP6445476A JPS52183A JP S52183 A JPS52183 A JP S52183A JP 51064454 A JP51064454 A JP 51064454A JP 6445476 A JP6445476 A JP 6445476A JP S52183 A JPS52183 A JP S52183A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- cmos semiconductor
- producing cmos
- producing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/587,465 US4002501A (en) | 1975-06-16 | 1975-06-16 | High speed, high yield CMOS/SOS process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52183A true JPS52183A (en) | 1977-01-05 |
Family
ID=24349910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51064454A Pending JPS52183A (en) | 1975-06-16 | 1976-06-01 | Method of producing cmos semiconductor element |
Country Status (6)
Country | Link |
---|---|
US (1) | US4002501A (ja) |
JP (1) | JPS52183A (ja) |
CA (1) | CA1048654A (ja) |
DE (1) | DE2623015A1 (ja) |
FR (1) | FR2315170A1 (ja) |
GB (1) | GB1484834A (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4097314A (en) * | 1976-12-30 | 1978-06-27 | Rca Corp. | Method of making a sapphire gate transistor |
US4217153A (en) * | 1977-04-04 | 1980-08-12 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
US4070211A (en) * | 1977-04-04 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Navy | Technique for threshold control over edges of devices on silicon-on-sapphire |
US4104087A (en) * | 1977-04-07 | 1978-08-01 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabricating MNOS memory circuits |
US4279069A (en) * | 1979-02-21 | 1981-07-21 | Rockwell International Corporation | Fabrication of a nonvolatile memory array device |
US4242156A (en) * | 1979-10-15 | 1980-12-30 | Rockwell International Corporation | Method of fabricating an SOS island edge passivation structure |
US4252574A (en) * | 1979-11-09 | 1981-02-24 | Rca Corporation | Low leakage N-channel SOS transistors and method of making them |
US4418470A (en) * | 1981-10-21 | 1983-12-06 | General Electric Company | Method for fabricating silicon-on-sapphire monolithic microwave integrated circuits |
US4399605A (en) * | 1982-02-26 | 1983-08-23 | International Business Machines Corporation | Method of making dense complementary transistors |
JPS5978557A (ja) * | 1982-10-27 | 1984-05-07 | Toshiba Corp | 相補型mos半導体装置の製造方法 |
US4462151A (en) * | 1982-12-03 | 1984-07-31 | International Business Machines Corporation | Method of making high density complementary transistors |
US4470191A (en) * | 1982-12-09 | 1984-09-11 | International Business Machines Corporation | Process for making complementary transistors by sequential implantations using oxidation barrier masking layer |
US4751554A (en) * | 1985-09-27 | 1988-06-14 | Rca Corporation | Silicon-on-sapphire integrated circuit and method of making the same |
US4758529A (en) * | 1985-10-31 | 1988-07-19 | Rca Corporation | Method of forming an improved gate dielectric for a MOSFET on an insulating substrate |
US4722912A (en) * | 1986-04-28 | 1988-02-02 | Rca Corporation | Method of forming a semiconductor structure |
US4735917A (en) * | 1986-04-28 | 1988-04-05 | General Electric Company | Silicon-on-sapphire integrated circuits |
US4755481A (en) * | 1986-05-15 | 1988-07-05 | General Electric Company | Method of making a silicon-on-insulator transistor |
US5248623A (en) * | 1988-02-19 | 1993-09-28 | Nippondenso Co., Ltd. | Method for making a polycrystalline diode having high breakdown |
JP2653099B2 (ja) * | 1988-05-17 | 1997-09-10 | セイコーエプソン株式会社 | アクティブマトリクスパネル,投写型表示装置及びビューファインダー |
US4988638A (en) * | 1988-11-07 | 1991-01-29 | Xerox Corporation | Method of fabrication a thin film SOI CMOS device |
US5087580A (en) * | 1990-09-17 | 1992-02-11 | Texas Instruments Incorporated | Self-aligned bipolar transistor structure and fabrication process |
US5953582A (en) * | 1993-02-10 | 1999-09-14 | Seiko Epson Corporation | Active matrix panel manufacturing method including TFTS having variable impurity concentration levels |
US5300443A (en) * | 1993-06-30 | 1994-04-05 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating complementary enhancement and depletion mode field effect transistors on a single substrate |
JPH08153879A (ja) | 1994-11-26 | 1996-06-11 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
KR100226730B1 (ko) * | 1997-04-24 | 1999-10-15 | 구본준 | 씨모스펫 및 그 제조방법 |
US6236089B1 (en) | 1998-01-07 | 2001-05-22 | Lg Semicon Co., Ltd. | CMOSFET and method for fabricating the same |
US6211045B1 (en) * | 1999-11-30 | 2001-04-03 | Vlsi Technology, Inc. | Incorporation of nitrogen-based gas in polysilicon gate re-oxidation to improve hot carrier performance |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
US3461361A (en) * | 1966-02-24 | 1969-08-12 | Rca Corp | Complementary mos transistor integrated circuits with inversion layer formed by ionic discharge bombardment |
US3636418A (en) * | 1969-08-06 | 1972-01-18 | Rca Corp | Epitaxial semiconductor device having adherent bonding pads |
US3745072A (en) * | 1970-04-07 | 1973-07-10 | Rca Corp | Semiconductor device fabrication |
US3749614A (en) * | 1970-09-14 | 1973-07-31 | Rca Corp | Fabrication of semiconductor devices |
AU464038B2 (en) * | 1970-12-09 | 1975-08-14 | Philips Nv | Improvements in and relating to semiconductor devices |
-
1975
- 1975-06-16 US US05/587,465 patent/US4002501A/en not_active Expired - Lifetime
-
1976
- 1976-01-19 CA CA76243794A patent/CA1048654A/en not_active Expired
- 1976-03-03 FR FR7606043A patent/FR2315170A1/fr active Granted
- 1976-03-11 GB GB9825/76A patent/GB1484834A/en not_active Expired
- 1976-05-22 DE DE19762623015 patent/DE2623015A1/de active Pending
- 1976-06-01 JP JP51064454A patent/JPS52183A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
FR2315170A1 (fr) | 1977-01-14 |
DE2623015A1 (de) | 1977-01-20 |
FR2315170B3 (ja) | 1978-12-01 |
US4002501A (en) | 1977-01-11 |
CA1048654A (en) | 1979-02-13 |
GB1484834A (en) | 1977-09-08 |
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