JPS5216407A - Apparatus for zone melting of semiconductor rod without crucible - Google Patents

Apparatus for zone melting of semiconductor rod without crucible

Info

Publication number
JPS5216407A
JPS5216407A JP51090117A JP9011776A JPS5216407A JP S5216407 A JPS5216407 A JP S5216407A JP 51090117 A JP51090117 A JP 51090117A JP 9011776 A JP9011776 A JP 9011776A JP S5216407 A JPS5216407 A JP S5216407A
Authority
JP
Japan
Prior art keywords
crucible
zone melting
semiconductor rod
semiconductor
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP51090117A
Other languages
English (en)
Inventor
Shiyutouuto Hansu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5216407A publication Critical patent/JPS5216407A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP51090117A 1975-07-29 1976-07-28 Apparatus for zone melting of semiconductor rod without crucible Pending JPS5216407A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE7524087U DE7524087U (de) 1975-07-29 1975-07-29 Vorrichtung zum tiegelfreien zonenschmelzen von halbleitermaterialstaeben

Publications (1)

Publication Number Publication Date
JPS5216407A true JPS5216407A (en) 1977-02-07

Family

ID=6654136

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51090117A Pending JPS5216407A (en) 1975-07-29 1976-07-28 Apparatus for zone melting of semiconductor rod without crucible

Country Status (2)

Country Link
JP (1) JPS5216407A (ja)
DE (1) DE7524087U (ja)

Also Published As

Publication number Publication date
DE7524087U (de) 1976-01-02

Similar Documents

Publication Publication Date Title
GB1549639A (en) Process for the controlled cooling of metal
JPS5263895A (en) Molten slag formation apparatus
JPS5230273A (en) Apparatus for forming semiconductor crystals having substantially homogeneous diameter
ZA763215B (en) Apparatus for casting articles of concrete of other material
JPS5225744A (en) Process for manufacture of isomer 1*44dibromoo epoxyycyclohexene
JPS51123210A (en) Method of melting glass and apparatus for carrying out thereof
JPS5283165A (en) Method of uniformly transferring ringgshaped melting zone through solid
YU4977A (en) Process for the regulated slow cooling of nonferrous scale formed during melting
JPS5326705A (en) Apparatus for zone melting of semiconductor rod without crucible
JPS5216406A (en) Apparatus for zone melting of semiconductor rod without crucible
JPS5256120A (en) Method of melting glass
GB1541099A (en) Method for thermal treatment of fine-grain material
JPS5210807A (en) Process and apparatus for zone melting of semiconductor crystal rod without aid of crucible
JPS5220306A (en) Apparatus for zone melting of semiconductor rod without crucible
JPS5418478A (en) Method and apparatus for crucibleefree zone melting semiconductor rods
JPS51133106A (en) Apparatus for production of single crystals
JPS5216407A (en) Apparatus for zone melting of semiconductor rod without crucible
JPS527814A (en) Melting method of materials containing iron
JPS526309A (en) Temperature zone melting process using no crucible
JPS5218408A (en) Crucible for melting superalloys
JPS5358530A (en) Process for treatment of melted slag
JPS5311104A (en) Apparatus for zone melting of metals and semiconductors
GB1535333A (en) Process for the preparation of 3-bromo-benzaldehyde
JPS5241620A (en) Method of melting glass material
JPS5241624A (en) Method of melting glass material