JPS5216192A - Luminous diode and its producing method - Google Patents

Luminous diode and its producing method

Info

Publication number
JPS5216192A
JPS5216192A JP9190975A JP9190975A JPS5216192A JP S5216192 A JPS5216192 A JP S5216192A JP 9190975 A JP9190975 A JP 9190975A JP 9190975 A JP9190975 A JP 9190975A JP S5216192 A JPS5216192 A JP S5216192A
Authority
JP
Japan
Prior art keywords
producing method
luminous diode
halls
conductratio
metals
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9190975A
Other languages
English (en)
Other versions
JPS539064B2 (ja
Inventor
Mitsuhiro Mori
Kazuhiro Ito
Makoto Morioka
Yuichi Ono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9190975A priority Critical patent/JPS5216192A/ja
Priority to US05/710,307 priority patent/US4032945A/en
Priority to DE19762634330 priority patent/DE2634330A1/de
Publication of JPS5216192A publication Critical patent/JPS5216192A/ja
Publication of JPS539064B2 publication Critical patent/JPS539064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/002—Devices characterised by their operation having heterojunctions or graded gap
    • H01L33/0025—Devices characterised by their operation having heterojunctions or graded gap comprising only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
JP9190975A 1975-07-30 1975-07-30 Luminous diode and its producing method Granted JPS5216192A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP9190975A JPS5216192A (en) 1975-07-30 1975-07-30 Luminous diode and its producing method
US05/710,307 US4032945A (en) 1975-07-30 1976-07-30 Light emitting semiconductor diode
DE19762634330 DE2634330A1 (de) 1975-07-30 1976-07-30 Lichtemittierende halbleiterdiode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9190975A JPS5216192A (en) 1975-07-30 1975-07-30 Luminous diode and its producing method

Publications (2)

Publication Number Publication Date
JPS5216192A true JPS5216192A (en) 1977-02-07
JPS539064B2 JPS539064B2 (ja) 1978-04-03

Family

ID=14039695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9190975A Granted JPS5216192A (en) 1975-07-30 1975-07-30 Luminous diode and its producing method

Country Status (3)

Country Link
US (1) US4032945A (ja)
JP (1) JPS5216192A (ja)
DE (1) DE2634330A1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS543483A (en) * 1977-06-10 1979-01-11 Hitachi Ltd Liminous semiconductor device
US6252221B1 (en) * 1999-06-21 2001-06-26 Agilent Technologies, Inc. Photo-conductive switch having an improved semiconductor structure
DE10101554A1 (de) * 2001-01-15 2002-08-01 Osram Opto Semiconductors Gmbh Lumineszenzdiode
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6831302B2 (en) 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
US20050161696A1 (en) * 2004-01-28 2005-07-28 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device and method for fabricating the same
US20050173714A1 (en) * 2004-02-06 2005-08-11 Ho-Shang Lee Lighting system with high and improved extraction efficiency
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
KR101198763B1 (ko) * 2006-03-23 2012-11-12 엘지이노텍 주식회사 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법
CN108777910B (zh) * 2018-06-15 2020-05-12 武汉华星光电半导体显示技术有限公司 柔性电路板、显示面板以及显示模组

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303432A (en) * 1966-04-18 1967-02-07 Gen Electric High power semiconductor laser devices
US3697336A (en) * 1966-05-02 1972-10-10 Rca Corp Method of making semiconductor devices
US3711789A (en) * 1970-11-18 1973-01-16 Texas Instruments Inc Diode array assembly for diode pumped lasers
US3790868A (en) * 1972-10-27 1974-02-05 Hewlett Packard Co Efficient red emitting electroluminescent semiconductor
US3974514A (en) * 1974-12-11 1976-08-10 Rca Corporation Electroluminescent edge-emitting diode comprising a light reflector in a groove
US3991339A (en) * 1975-05-27 1976-11-09 Rca Corporation Light emitting diode with reflector

Also Published As

Publication number Publication date
US4032945A (en) 1977-06-28
DE2634330A1 (de) 1977-02-03
JPS539064B2 (ja) 1978-04-03

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