JPS5216170A - Formaton method of insulator thin film - Google Patents
Formaton method of insulator thin filmInfo
- Publication number
- JPS5216170A JPS5216170A JP50091908A JP9190875A JPS5216170A JP S5216170 A JPS5216170 A JP S5216170A JP 50091908 A JP50091908 A JP 50091908A JP 9190875 A JP9190875 A JP 9190875A JP S5216170 A JPS5216170 A JP S5216170A
- Authority
- JP
- Japan
- Prior art keywords
- formaton
- thin film
- insulator thin
- oxide film
- insulator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Light Receiving Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50091908A JPS5216170A (en) | 1975-07-30 | 1975-07-30 | Formaton method of insulator thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50091908A JPS5216170A (en) | 1975-07-30 | 1975-07-30 | Formaton method of insulator thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5216170A true JPS5216170A (en) | 1977-02-07 |
Family
ID=14039667
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50091908A Pending JPS5216170A (en) | 1975-07-30 | 1975-07-30 | Formaton method of insulator thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5216170A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135614A (ja) * | 1983-12-23 | 1985-07-19 | Sankei Giken Kogyo Kk | 触媒コンバ−タ |
-
1975
- 1975-07-30 JP JP50091908A patent/JPS5216170A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60135614A (ja) * | 1983-12-23 | 1985-07-19 | Sankei Giken Kogyo Kk | 触媒コンバ−タ |
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