JPS521399A - The fixation treatment method of a radioactive gas and its device - Google Patents

The fixation treatment method of a radioactive gas and its device

Info

Publication number
JPS521399A
JPS521399A JP50078016A JP7801675A JPS521399A JP S521399 A JPS521399 A JP S521399A JP 50078016 A JP50078016 A JP 50078016A JP 7801675 A JP7801675 A JP 7801675A JP S521399 A JPS521399 A JP S521399A
Authority
JP
Japan
Prior art keywords
treatment method
radioactive gas
fixation treatment
gas
fixation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50078016A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5321478B2 (OSRAM
Inventor
Tomotaka Terasawa
Katsuhiko Motai
Osamu Morimiya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50078016A priority Critical patent/JPS521399A/ja
Priority to FR7619124A priority patent/FR2317738A1/fr
Priority to US05/699,655 priority patent/US4124802A/en
Publication of JPS521399A publication Critical patent/JPS521399A/ja
Publication of JPS5321478B2 publication Critical patent/JPS5321478B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21F—PROTECTION AGAINST X-RADIATION, GAMMA RADIATION, CORPUSCULAR RADIATION OR PARTICLE BOMBARDMENT; TREATING RADIOACTIVELY CONTAMINATED MATERIAL; DECONTAMINATION ARRANGEMENTS THEREFOR
    • G21F9/00—Treating radioactively contaminated material; Decontamination arrangements therefor
    • G21F9/02—Treating gases
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/04—Irradiation devices with beam-forming means

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Treating Waste Gases (AREA)
  • Particle Accelerators (AREA)
JP50078016A 1975-06-24 1975-06-24 The fixation treatment method of a radioactive gas and its device Granted JPS521399A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50078016A JPS521399A (en) 1975-06-24 1975-06-24 The fixation treatment method of a radioactive gas and its device
FR7619124A FR2317738A1 (fr) 1975-06-24 1976-06-23 Procede et appareil pour implanter un gaz radioactif dans une matiere destinee a emprisonner ce gaz
US05/699,655 US4124802A (en) 1975-06-24 1976-06-24 Method and apparatus for implanting radioactive gas in a base material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50078016A JPS521399A (en) 1975-06-24 1975-06-24 The fixation treatment method of a radioactive gas and its device

Publications (2)

Publication Number Publication Date
JPS521399A true JPS521399A (en) 1977-01-07
JPS5321478B2 JPS5321478B2 (OSRAM) 1978-07-03

Family

ID=13649987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50078016A Granted JPS521399A (en) 1975-06-24 1975-06-24 The fixation treatment method of a radioactive gas and its device

Country Status (3)

Country Link
US (1) US4124802A (OSRAM)
JP (1) JPS521399A (OSRAM)
FR (1) FR2317738A1 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637023A (en) * 1979-09-03 1981-04-10 Toshiba Corp Amorphous solid with fixed waste gas
US8379789B2 (en) 2004-05-30 2013-02-19 Pebble Bed Modular Reactor (Proprietary) Limited Nuclear plant
JP2022190639A (ja) * 2021-06-14 2022-12-26 晴雄 森重 燃料デブリの回収工法

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5813876B2 (ja) * 1977-12-16 1983-03-16 株式会社東芝 放射性ガスまたは有害ガスの貯蔵方法および装置
US4194123A (en) * 1978-05-12 1980-03-18 Rockwell International Corporation Lithographic apparatus
JPS55101893A (en) * 1979-01-31 1980-08-04 Tokyo Shibaura Electric Co Nuclear fuel rod
FR2538603B1 (fr) * 1982-12-23 1988-07-01 Commissariat Energie Atomique Procede de conditionnement de dechets constitues par des particules metalliques radioactives telles que les fines de dissolution des elements combustibles irradies
DE3323060C2 (de) * 1983-06-27 1986-03-20 Deutsche Gesellschaft für Wiederaufarbeitung von Kernbrennstoffen mbH, 3000 Hannover Verfahren zur Fixierung von radioaktivem Krypton sowie Vorrichtung zur Durchführung des Verfahrens
GB8522976D0 (en) * 1985-09-17 1985-10-23 Atomic Energy Authority Uk Ion sources
JP2724503B2 (ja) * 1989-06-29 1998-03-09 東京エレクトロン株式会社 イオン注入装置
JP2662321B2 (ja) * 1991-05-31 1997-10-08 科学技術振興事業団 超低速クラスターイオンビームによる表面処理方法
US5224249A (en) * 1992-01-21 1993-07-06 Grumman Aerospace Corporation Corrosion prevention of honeycomb core panel construction using ion implantation
US5473165A (en) * 1993-11-16 1995-12-05 Stinnett; Regan W. Method and apparatus for altering material
US5445689A (en) * 1994-08-23 1995-08-29 Northrop Grumman Corporation Pulsed ion beam surface treatment process for aluminum honeycomb panels to improve corrosion resistance
US5894133A (en) * 1996-12-18 1999-04-13 Implant Science Corporation Sputter cathode for application of radioactive material
US5834787A (en) * 1997-07-02 1998-11-10 Bunker; Stephen N. Device for measuring flux and accumulated dose for an ion beam containing a radioactive element
US5898178A (en) * 1997-07-02 1999-04-27 Implant Sciences Corporation Ion source for generation of radioactive ion beams
JP3941434B2 (ja) * 2001-08-09 2007-07-04 日新イオン機器株式会社 イオン注入装置およびその運転方法
DE102004014618B3 (de) * 2004-03-23 2005-11-10 Eads Space Transportation Gmbh Elektrothermisches Impuls-Triebwerk
US8329260B2 (en) * 2008-03-11 2012-12-11 Varian Semiconductor Equipment Associates, Inc. Cooled cleaving implant
US10566169B1 (en) 2008-06-30 2020-02-18 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
US10991545B2 (en) 2008-06-30 2021-04-27 Nexgen Semi Holding, Inc. Method and device for spatial charged particle bunching
TWI412052B (zh) * 2009-07-14 2013-10-11 Univ Nat Central 以奈米粒子產生離子源之方法
EP2718935B1 (en) * 2011-06-08 2016-08-17 BAE Systems PLC Electricity generation
EP2533250A1 (en) * 2011-06-08 2012-12-12 BAE Systems Plc Electricity generation
US12493005B1 (en) 2022-06-07 2025-12-09 Nexgen Semi Holding, Inc. Extended range active illumination imager

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2682611A (en) * 1953-01-29 1954-06-29 Atomic Energy Commission Ion source
US3434894A (en) * 1965-10-06 1969-03-25 Ion Physics Corp Fabricating solid state devices by ion implantation
US3585397A (en) * 1968-10-04 1971-06-15 Hughes Aircraft Co Programmed fine ion implantation beam system
US3569757A (en) * 1968-10-04 1971-03-09 Houghes Aircraft Co Acceleration system for implanting ions in specimen
US3786359A (en) * 1969-03-28 1974-01-15 Alpha Ind Inc Ion accelerator and ion species selector
US3699334A (en) * 1969-06-16 1972-10-17 Kollsman Instr Corp Apparatus using a beam of positive ions for controlled erosion of surfaces

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5637023A (en) * 1979-09-03 1981-04-10 Toshiba Corp Amorphous solid with fixed waste gas
US8379789B2 (en) 2004-05-30 2013-02-19 Pebble Bed Modular Reactor (Proprietary) Limited Nuclear plant
JP2022190639A (ja) * 2021-06-14 2022-12-26 晴雄 森重 燃料デブリの回収工法

Also Published As

Publication number Publication date
US4124802A (en) 1978-11-07
JPS5321478B2 (OSRAM) 1978-07-03
FR2317738B1 (OSRAM) 1982-11-12
FR2317738A1 (fr) 1977-02-04

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