JPS52135275A - Me/b type charge transfer device - Google Patents

Me/b type charge transfer device

Info

Publication number
JPS52135275A
JPS52135275A JP5206276A JP5206276A JPS52135275A JP S52135275 A JPS52135275 A JP S52135275A JP 5206276 A JP5206276 A JP 5206276A JP 5206276 A JP5206276 A JP 5206276A JP S52135275 A JPS52135275 A JP S52135275A
Authority
JP
Japan
Prior art keywords
transfer device
charge transfer
type charge
electrode
inout
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5206276A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5741106B2 (enExample
Inventor
Susumu Kayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5206276A priority Critical patent/JPS52135275A/ja
Publication of JPS52135275A publication Critical patent/JPS52135275A/ja
Priority to US05/955,212 priority patent/US4211937A/en
Publication of JPS5741106B2 publication Critical patent/JPS5741106B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP5206276A 1976-01-23 1976-05-07 Me/b type charge transfer device Granted JPS52135275A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP5206276A JPS52135275A (en) 1976-05-07 1976-05-07 Me/b type charge transfer device
US05/955,212 US4211937A (en) 1976-01-23 1978-10-27 Multi-channel charge coupled transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5206276A JPS52135275A (en) 1976-05-07 1976-05-07 Me/b type charge transfer device

Publications (2)

Publication Number Publication Date
JPS52135275A true JPS52135275A (en) 1977-11-12
JPS5741106B2 JPS5741106B2 (enExample) 1982-09-01

Family

ID=12904316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5206276A Granted JPS52135275A (en) 1976-01-23 1976-05-07 Me/b type charge transfer device

Country Status (1)

Country Link
JP (1) JPS52135275A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59112203A (ja) * 1982-12-18 1984-06-28 Kanto Jidosha Kogyo Kk 穴位置測定方法
JPS5995203U (ja) * 1982-12-18 1984-06-28 関東自動車工業株式会社 穴位置測定用補助具

Also Published As

Publication number Publication date
JPS5741106B2 (enExample) 1982-09-01

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