JPS52132771A - Field emission device and method of fabricating same - Google Patents

Field emission device and method of fabricating same

Info

Publication number
JPS52132771A
JPS52132771A JP4749377A JP4749377A JPS52132771A JP S52132771 A JPS52132771 A JP S52132771A JP 4749377 A JP4749377 A JP 4749377A JP 4749377 A JP4749377 A JP 4749377A JP S52132771 A JPS52132771 A JP S52132771A
Authority
JP
Japan
Prior art keywords
field emission
emission device
fabricating same
fabricating
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4749377A
Other languages
English (en)
Inventor
Marii Oihen Hooberehitsu Aasaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS52132771A publication Critical patent/JPS52132771A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type

Landscapes

  • Cold Cathode And The Manufacture (AREA)
  • Drying Of Semiconductors (AREA)
JP4749377A 1976-04-29 1977-04-26 Field emission device and method of fabricating same Pending JPS52132771A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7604569A NL7604569A (nl) 1976-04-29 1976-04-29 Veldemitterinrichting en werkwijze tot het vormen daarvan.

Publications (1)

Publication Number Publication Date
JPS52132771A true JPS52132771A (en) 1977-11-07

Family

ID=19826099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4749377A Pending JPS52132771A (en) 1976-04-29 1977-04-26 Field emission device and method of fabricating same

Country Status (10)

Country Link
US (1) US4095133A (ja)
JP (1) JPS52132771A (ja)
AU (1) AU503434B2 (ja)
CA (1) CA1081312A (ja)
CH (1) CH615780A5 (ja)
DE (1) DE2716992A1 (ja)
FR (1) FR2349947A1 (ja)
GB (1) GB1530841A (ja)
IT (1) IT1084485B (ja)
NL (1) NL7604569A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594762A (ja) * 1991-10-02 1993-04-16 Sharp Corp 電界放出型電子源及びその製造方法
US5831378A (en) * 1992-02-14 1998-11-03 Micron Technology, Inc. Insulative barrier useful in field emission displays for reducing surface leakage
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184549C (nl) * 1978-01-27 1989-08-16 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenstroom en weergeefinrichting voorzien van een dergelijke halfgeleiderinrichting.
NL184589C (nl) * 1979-07-13 1989-09-01 Philips Nv Halfgeleiderinrichting voor het opwekken van een elektronenbundel en werkwijze voor het vervaardigen van een dergelijke halfgeleiderinrichting.
US4307507A (en) * 1980-09-10 1981-12-29 The United States Of America As Represented By The Secretary Of The Navy Method of manufacturing a field-emission cathode structure
US4728851A (en) * 1982-01-08 1988-03-01 Ford Motor Company Field emitter device with gated memory
US4906894A (en) * 1986-06-19 1990-03-06 Canon Kabushiki Kaisha Photoelectron beam converting device and method of driving the same
DE3628847C2 (de) * 1986-08-25 1995-12-14 Max Planck Gesellschaft Heißkathoden-Ionisationsmanometer
US4721885A (en) * 1987-02-11 1988-01-26 Sri International Very high speed integrated microelectronic tubes
USRE40566E1 (en) * 1987-07-15 2008-11-11 Canon Kabushiki Kaisha Flat panel display including electron emitting device
GB8720792D0 (en) * 1987-09-04 1987-10-14 Gen Electric Co Plc Vacuum devices
US4926056A (en) * 1988-06-10 1990-05-15 Sri International Microelectronic field ionizer and method of fabricating the same
US5126287A (en) * 1990-06-07 1992-06-30 Mcnc Self-aligned electron emitter fabrication method and devices formed thereby
GB9101723D0 (en) * 1991-01-25 1991-03-06 Marconi Gec Ltd Field emission devices
US5138237A (en) * 1991-08-20 1992-08-11 Motorola, Inc. Field emission electron device employing a modulatable diamond semiconductor emitter
US5627427A (en) * 1991-12-09 1997-05-06 Cornell Research Foundation, Inc. Silicon tip field emission cathodes
US5199917A (en) * 1991-12-09 1993-04-06 Cornell Research Foundation, Inc. Silicon tip field emission cathode arrays and fabrication thereof
US5371431A (en) * 1992-03-04 1994-12-06 Mcnc Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions
US5499938A (en) * 1992-07-14 1996-03-19 Kabushiki Kaisha Toshiba Field emission cathode structure, method for production thereof, and flat panel display device using same
JP3253683B2 (ja) * 1992-07-14 2002-02-04 株式会社東芝 電界放出型冷陰極板の製造方法
KR950008758B1 (ko) * 1992-12-11 1995-08-04 삼성전관주식회사 실리콘 전계방출 소자 및 그의 제조방법
US5903098A (en) * 1993-03-11 1999-05-11 Fed Corporation Field emission display device having multiplicity of through conductive vias and a backside connector
US5561339A (en) * 1993-03-11 1996-10-01 Fed Corporation Field emission array magnetic sensor devices
US5534743A (en) * 1993-03-11 1996-07-09 Fed Corporation Field emission display devices, and field emission electron beam source and isolation structure components therefor
WO1994020975A1 (en) * 1993-03-11 1994-09-15 Fed Corporation Emitter tip structure and field emission device comprising same, and method of making same
US5584740A (en) * 1993-03-31 1996-12-17 The United States Of America As Represented By The Secretary Of The Navy Thin-film edge field emitter device and method of manufacture therefor
US5536988A (en) * 1993-06-01 1996-07-16 Cornell Research Foundation, Inc. Compound stage MEM actuator suspended for multidimensional motion
FR2709206B1 (fr) * 1993-06-14 2004-08-20 Fujitsu Ltd Dispositif cathode ayant une petite ouverture, et son procédé de fabrication.
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
US5844251A (en) * 1994-01-05 1998-12-01 Cornell Research Foundation, Inc. High aspect ratio probes with self-aligned control electrodes
US5480843A (en) * 1994-02-10 1996-01-02 Samsung Display Devices Co., Ltd. Method for making a field emission device
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
US5629583A (en) * 1994-07-25 1997-05-13 Fed Corporation Flat panel display assembly comprising photoformed spacer structure, and method of making the same
US5688158A (en) * 1995-08-24 1997-11-18 Fed Corporation Planarizing process for field emitter displays and other electron source applications
US5828288A (en) * 1995-08-24 1998-10-27 Fed Corporation Pedestal edge emitter and non-linear current limiters for field emitter displays and other electron source applications
US5844351A (en) * 1995-08-24 1998-12-01 Fed Corporation Field emitter device, and veil process for THR fabrication thereof
KR100211945B1 (ko) * 1995-12-20 1999-08-02 정선종 광게이트 트랜지스터를 이용한 mux 및 demux 회로
US5828163A (en) * 1997-01-13 1998-10-27 Fed Corporation Field emitter device with a current limiter structure
TW483025B (en) * 2000-10-24 2002-04-11 Nat Science Council Formation method of metal tip electrode field emission structure
US7701128B2 (en) * 2005-02-04 2010-04-20 Industrial Technology Research Institute Planar light unit using field emitters and method for fabricating the same
US7564178B2 (en) * 2005-02-14 2009-07-21 Agere Systems Inc. High-density field emission elements and a method for forming said emission elements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3814968A (en) * 1972-02-11 1974-06-04 Lucas Industries Ltd Solid state radiation sensitive field electron emitter and methods of fabrication thereof
JPS5325632B2 (ja) * 1973-03-22 1978-07-27
JPS5436828B2 (ja) * 1974-08-16 1979-11-12

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594762A (ja) * 1991-10-02 1993-04-16 Sharp Corp 電界放出型電子源及びその製造方法
US5831378A (en) * 1992-02-14 1998-11-03 Micron Technology, Inc. Insulative barrier useful in field emission displays for reducing surface leakage
US6066507A (en) * 1992-02-14 2000-05-23 Micron Technology, Inc. Method to form an insulative barrier useful in field emission displays for reducing surface leakage
US6022256A (en) * 1996-11-06 2000-02-08 Micron Display Technology, Inc. Field emission display and method of making same
US6181060B1 (en) 1996-11-06 2001-01-30 Micron Technology, Inc. Field emission display with plural dielectric layers

Also Published As

Publication number Publication date
IT1084485B (it) 1985-05-25
FR2349947B1 (ja) 1981-09-18
FR2349947A1 (fr) 1977-11-25
AU503434B2 (en) 1979-09-06
US4095133A (en) 1978-06-13
CA1081312A (en) 1980-07-08
AU2458277A (en) 1978-11-02
GB1530841A (en) 1978-11-01
NL7604569A (nl) 1977-11-01
DE2716992A1 (de) 1977-11-17
CH615780A5 (ja) 1980-02-15

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