JPS52131197A - Manufacturing method of transparent electrode - Google Patents
Manufacturing method of transparent electrodeInfo
- Publication number
- JPS52131197A JPS52131197A JP4771876A JP4771876A JPS52131197A JP S52131197 A JPS52131197 A JP S52131197A JP 4771876 A JP4771876 A JP 4771876A JP 4771876 A JP4771876 A JP 4771876A JP S52131197 A JPS52131197 A JP S52131197A
- Authority
- JP
- Japan
- Prior art keywords
- manufacturing
- transparent electrode
- sno2
- nessa
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
PURPOSE:To obtain SnO2 nessa film having a predetermined thrickness even if the temperature distribution in a substrate may be uneven by adding hydrate such as SnCl4. Xh2O in a process forming SnO2 nessa film, in a CSD method for SNO2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4771876A JPS52131197A (en) | 1976-04-28 | 1976-04-28 | Manufacturing method of transparent electrode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4771876A JPS52131197A (en) | 1976-04-28 | 1976-04-28 | Manufacturing method of transparent electrode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52131197A true JPS52131197A (en) | 1977-11-02 |
Family
ID=12783082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4771876A Pending JPS52131197A (en) | 1976-04-28 | 1976-04-28 | Manufacturing method of transparent electrode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52131197A (en) |
-
1976
- 1976-04-28 JP JP4771876A patent/JPS52131197A/en active Pending
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