JPS52120687A - Method of measuring conductive piece - Google Patents

Method of measuring conductive piece

Info

Publication number
JPS52120687A
JPS52120687A JP2616577A JP2616577A JPS52120687A JP S52120687 A JPS52120687 A JP S52120687A JP 2616577 A JP2616577 A JP 2616577A JP 2616577 A JP2616577 A JP 2616577A JP S52120687 A JPS52120687 A JP S52120687A
Authority
JP
Japan
Prior art keywords
conductive piece
measuring conductive
measuring
piece
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2616577A
Other languages
English (en)
Japanese (ja)
Other versions
JPS549029B2 (enExample
Inventor
Kanchiraru Gataria Ashiyuin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS52120687A publication Critical patent/JPS52120687A/ja
Publication of JPS549029B2 publication Critical patent/JPS549029B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2644—Adaptations of individual semiconductor devices to facilitate the testing thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2616577A 1976-04-01 1977-03-11 Method of measuring conductive piece Granted JPS52120687A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/672,687 US4024561A (en) 1976-04-01 1976-04-01 Field effect transistor monitors

Publications (2)

Publication Number Publication Date
JPS52120687A true JPS52120687A (en) 1977-10-11
JPS549029B2 JPS549029B2 (enExample) 1979-04-20

Family

ID=24699595

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2616577A Granted JPS52120687A (en) 1976-04-01 1977-03-11 Method of measuring conductive piece

Country Status (4)

Country Link
US (1) US4024561A (enExample)
JP (1) JPS52120687A (enExample)
FR (1) FR2346853A1 (enExample)
GB (1) GB1510777A (enExample)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4100486A (en) * 1977-03-11 1978-07-11 International Business Machines Corporation Monitor for semiconductor diffusion operations
US4399205A (en) * 1981-11-30 1983-08-16 International Business Machines Corporation Method and apparatus for determining photomask alignment
US4642491A (en) * 1983-06-24 1987-02-10 International Business Machines Corporation Single transistor driver circuit
EP0359866A1 (de) * 1988-09-23 1990-03-28 Siemens Aktiengesellschaft Verfahren und Halbleiteranordnung zum Messen der Stromaufnahme einer monolithisch integrierten Leistungsstruktur
US5500805A (en) * 1993-10-06 1996-03-19 Nsoft Systems, Inc. Multiple source equalization design utilizing metal interconnects for gate arrays and embedded arrays
US5563801A (en) * 1993-10-06 1996-10-08 Nsoft Systems, Inc. Process independent design for gate array devices
US5510999A (en) * 1993-10-06 1996-04-23 Nsoft Systems, Inc. Multiple source equalization design for gate arrays and embedded arrays
EP0685881A1 (en) * 1994-05-31 1995-12-06 AT&T Corp. Linewidth control apparatus and method
US5619420A (en) * 1995-05-04 1997-04-08 Lsi Logic Corporation Semiconductor cell having a variable transistor width
KR100272659B1 (ko) 1997-06-28 2000-12-01 김영환 반도체 소자의 금속배선 선폭 측정방법
US7183623B2 (en) * 2001-10-02 2007-02-27 Agere Systems Inc. Trimmed integrated circuits with fuse circuits
US6747445B2 (en) 2001-10-31 2004-06-08 Agere Systems Inc. Stress migration test structure and method therefor
US6620635B2 (en) * 2002-02-20 2003-09-16 International Business Machines Corporation Damascene resistor and method for measuring the width of same
US6815237B1 (en) * 2003-09-29 2004-11-09 Rockwell Scientific Licensing, Llc Testing apparatus and method for determining an etch bias associated with a semiconductor-processing step
US7514940B1 (en) * 2006-12-13 2009-04-07 National Semiconductor Corporation System and method for determining effective channel dimensions of metal oxide semiconductor devices
US8013400B1 (en) 2008-04-21 2011-09-06 National Semiconductor Corporation Method and system for scaling channel length

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH399588A (de) * 1962-07-17 1965-09-30 Siemens Ag Verfahren zum Bestimmen des spezifischen Widerstandes einer dünnen Halbleiterschicht
US3974443A (en) * 1975-01-02 1976-08-10 International Business Machines Corporation Conductive line width and resistivity measuring system

Also Published As

Publication number Publication date
GB1510777A (en) 1978-05-17
FR2346853B1 (enExample) 1979-03-09
JPS549029B2 (enExample) 1979-04-20
US4024561A (en) 1977-05-17
FR2346853A1 (fr) 1977-10-28

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