JPS52113689A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS52113689A
JPS52113689A JP3014376A JP3014376A JPS52113689A JP S52113689 A JPS52113689 A JP S52113689A JP 3014376 A JP3014376 A JP 3014376A JP 3014376 A JP3014376 A JP 3014376A JP S52113689 A JPS52113689 A JP S52113689A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser device
withdraw
amplify
disposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3014376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5741112B2 (me
Inventor
Kunio Ito
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP3014376A priority Critical patent/JPS52113689A/ja
Publication of JPS52113689A publication Critical patent/JPS52113689A/ja
Publication of JPS5741112B2 publication Critical patent/JPS5741112B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
JP3014376A 1976-03-19 1976-03-19 Semiconductor laser device Granted JPS52113689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3014376A JPS52113689A (en) 1976-03-19 1976-03-19 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3014376A JPS52113689A (en) 1976-03-19 1976-03-19 Semiconductor laser device

Publications (2)

Publication Number Publication Date
JPS52113689A true JPS52113689A (en) 1977-09-22
JPS5741112B2 JPS5741112B2 (me) 1982-09-01

Family

ID=12295534

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3014376A Granted JPS52113689A (en) 1976-03-19 1976-03-19 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS52113689A (me)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844770A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5844770A (ja) * 1981-09-10 1983-03-15 Fujitsu Ltd 半導体装置
JPS5967677A (ja) * 1982-07-01 1984-04-17 Semiconductor Res Found 光集積回路

Also Published As

Publication number Publication date
JPS5741112B2 (me) 1982-09-01

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