JPS52100234A - Stripping solution of photosolubilizable light sensitive resin - Google Patents
Stripping solution of photosolubilizable light sensitive resinInfo
- Publication number
- JPS52100234A JPS52100234A JP1738876A JP1738876A JPS52100234A JP S52100234 A JPS52100234 A JP S52100234A JP 1738876 A JP1738876 A JP 1738876A JP 1738876 A JP1738876 A JP 1738876A JP S52100234 A JPS52100234 A JP S52100234A
- Authority
- JP
- Japan
- Prior art keywords
- photosolubilizable
- light sensitive
- sensitive resin
- stripping solution
- aqueous solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Abstract
PURPOSE:To perfectly remove a positive type photoresist for use in forming electrodes of surface wave filter elements and the like, even if its surface becomes a passive state, by mixing acetone and an ammonia aqueous solution at a specified ratio.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1738876A JPS52100234A (en) | 1976-02-19 | 1976-02-19 | Stripping solution of photosolubilizable light sensitive resin |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1738876A JPS52100234A (en) | 1976-02-19 | 1976-02-19 | Stripping solution of photosolubilizable light sensitive resin |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52100234A true JPS52100234A (en) | 1977-08-23 |
JPS576579B2 JPS576579B2 (en) | 1982-02-05 |
Family
ID=11942605
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1738876A Granted JPS52100234A (en) | 1976-02-19 | 1976-02-19 | Stripping solution of photosolubilizable light sensitive resin |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52100234A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186330A (en) * | 1981-05-12 | 1982-11-16 | Matsushita Electronics Corp | Removing method for photoresist |
JPS5865432A (en) * | 1981-08-21 | 1983-04-19 | ゼネラル・エレクトリツク・カンパニイ | Etching of polymethyl methacrylate |
WO1994008276A1 (en) * | 1992-09-28 | 1994-04-14 | Ducoa L.P. | Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide |
CN109388036A (en) * | 2017-08-03 | 2019-02-26 | 无锡华瑛微电子技术有限公司 | A kind of minimizing technology for removing liquid and photoresist of photoresist |
EP3663857A4 (en) * | 2017-08-03 | 2020-09-09 | Huaying Research Co., Ltd | Photoresist stripping solution and method of stripping photoresist |
-
1976
- 1976-02-19 JP JP1738876A patent/JPS52100234A/en active Granted
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57186330A (en) * | 1981-05-12 | 1982-11-16 | Matsushita Electronics Corp | Removing method for photoresist |
JPS6222263B2 (en) * | 1981-05-12 | 1987-05-16 | Matsushita Electronics Corp | |
JPS5865432A (en) * | 1981-08-21 | 1983-04-19 | ゼネラル・エレクトリツク・カンパニイ | Etching of polymethyl methacrylate |
WO1994008276A1 (en) * | 1992-09-28 | 1994-04-14 | Ducoa L.P. | Photoresist stripping process using n,n-dimethyl-bis(2-hydroxyethyl) quaternary ammonium hydroxide |
CN109388036A (en) * | 2017-08-03 | 2019-02-26 | 无锡华瑛微电子技术有限公司 | A kind of minimizing technology for removing liquid and photoresist of photoresist |
EP3663857A4 (en) * | 2017-08-03 | 2020-09-09 | Huaying Research Co., Ltd | Photoresist stripping solution and method of stripping photoresist |
US11448966B2 (en) | 2017-08-03 | 2022-09-20 | Huaying Research Co., Ltd | Photoresist-removing liquid and photoresist-removing method |
Also Published As
Publication number | Publication date |
---|---|
JPS576579B2 (en) | 1982-02-05 |
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