JPS5198957A - - Google Patents
Info
- Publication number
- JPS5198957A JPS5198957A JP50023752A JP2375275A JPS5198957A JP S5198957 A JPS5198957 A JP S5198957A JP 50023752 A JP50023752 A JP 50023752A JP 2375275 A JP2375275 A JP 2375275A JP S5198957 A JPS5198957 A JP S5198957A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
Landscapes
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50023752A JPS5847851B2 (ja) | 1975-02-26 | 1975-02-26 | チタン層を有する半導体素子の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50023752A JPS5847851B2 (ja) | 1975-02-26 | 1975-02-26 | チタン層を有する半導体素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5198957A true JPS5198957A (ko) | 1976-08-31 |
JPS5847851B2 JPS5847851B2 (ja) | 1983-10-25 |
Family
ID=12119035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50023752A Expired JPS5847851B2 (ja) | 1975-02-26 | 1975-02-26 | チタン層を有する半導体素子の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5847851B2 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6193629A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 半導体装置の製造方法 |
JPS6340367A (ja) * | 1986-08-05 | 1988-02-20 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1975
- 1975-02-26 JP JP50023752A patent/JPS5847851B2/ja not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6193629A (ja) * | 1984-10-15 | 1986-05-12 | Nec Corp | 半導体装置の製造方法 |
JPH0451050B2 (ko) * | 1984-10-15 | 1992-08-18 | Nippon Electric Co | |
JPS6340367A (ja) * | 1986-08-05 | 1988-02-20 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5847851B2 (ja) | 1983-10-25 |