JPS5195785A - - Google Patents

Info

Publication number
JPS5195785A
JPS5195785A JP51003112A JP311276A JPS5195785A JP S5195785 A JPS5195785 A JP S5195785A JP 51003112 A JP51003112 A JP 51003112A JP 311276 A JP311276 A JP 311276A JP S5195785 A JPS5195785 A JP S5195785A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51003112A
Other languages
Japanese (ja)
Other versions
JPS5346701B2 (xx
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5195785A publication Critical patent/JPS5195785A/ja
Publication of JPS5346701B2 publication Critical patent/JPS5346701B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
JP311276A 1975-01-13 1976-01-12 Expired JPS5346701B2 (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54044375A 1975-01-13 1975-01-13

Publications (2)

Publication Number Publication Date
JPS5195785A true JPS5195785A (xx) 1976-08-21
JPS5346701B2 JPS5346701B2 (xx) 1978-12-15

Family

ID=24155496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP311276A Expired JPS5346701B2 (xx) 1975-01-13 1976-01-12

Country Status (11)

Country Link
JP (1) JPS5346701B2 (xx)
BE (1) BE837382A (xx)
CA (1) CA1040320A (xx)
CH (1) CH598695A5 (xx)
DE (1) DE2600221B2 (xx)
FR (1) FR2297496A1 (xx)
GB (1) GB1509949A (xx)
IN (1) IN144889B (xx)
IT (1) IT1049016B (xx)
NL (1) NL7600259A (xx)
SE (1) SE408508B (xx)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008504685A (ja) * 2004-06-23 2008-02-14 マイクロン テクノロジー,インコーポレイテッド Al2O3誘電体を用いるメモリ・セルの絶縁構造

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
JP2011119397A (ja) * 2009-12-02 2011-06-16 Canon Inc 半導体装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008504685A (ja) * 2004-06-23 2008-02-14 マイクロン テクノロジー,インコーポレイテッド Al2O3誘電体を用いるメモリ・セルの絶縁構造

Also Published As

Publication number Publication date
SE7600122L (sv) 1976-07-14
BE837382A (nl) 1976-05-03
CA1040320A (en) 1978-10-10
SE408508B (sv) 1979-06-11
DE2600221A1 (de) 1976-07-15
DE2600221B2 (de) 1978-09-07
CH598695A5 (xx) 1978-05-12
FR2297496A1 (fr) 1976-08-06
IT1049016B (it) 1981-01-20
IN144889B (xx) 1978-07-22
GB1509949A (en) 1978-05-10
JPS5346701B2 (xx) 1978-12-15
NL7600259A (nl) 1976-07-15

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