JPS5195785A - - Google Patents
Info
- Publication number
- JPS5195785A JPS5195785A JP51003112A JP311276A JPS5195785A JP S5195785 A JPS5195785 A JP S5195785A JP 51003112 A JP51003112 A JP 51003112A JP 311276 A JP311276 A JP 311276A JP S5195785 A JPS5195785 A JP S5195785A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54044375A | 1975-01-13 | 1975-01-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5195785A true JPS5195785A (xx) | 1976-08-21 |
JPS5346701B2 JPS5346701B2 (xx) | 1978-12-15 |
Family
ID=24155496
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP311276A Expired JPS5346701B2 (xx) | 1975-01-13 | 1976-01-12 |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS5346701B2 (xx) |
BE (1) | BE837382A (xx) |
CA (1) | CA1040320A (xx) |
CH (1) | CH598695A5 (xx) |
DE (1) | DE2600221B2 (xx) |
FR (1) | FR2297496A1 (xx) |
GB (1) | GB1509949A (xx) |
IN (1) | IN144889B (xx) |
IT (1) | IT1049016B (xx) |
NL (1) | NL7600259A (xx) |
SE (1) | SE408508B (xx) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008504685A (ja) * | 2004-06-23 | 2008-02-14 | マイクロン テクノロジー,インコーポレイテッド | Al2O3誘電体を用いるメモリ・セルの絶縁構造 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4448632A (en) * | 1981-05-25 | 1984-05-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor devices |
JP2011119397A (ja) * | 2009-12-02 | 2011-06-16 | Canon Inc | 半導体装置及びその製造方法 |
-
1975
- 1975-10-10 IN IN1961/CAL/1975A patent/IN144889B/en unknown
- 1975-10-28 GB GB44375/75A patent/GB1509949A/en not_active Expired
- 1975-10-31 IT IT28892/75A patent/IT1049016B/it active
-
1976
- 1976-01-05 DE DE2600221A patent/DE2600221B2/de not_active Withdrawn
- 1976-01-07 CH CH12676A patent/CH598695A5/xx not_active IP Right Cessation
- 1976-01-07 BE BE7000759A patent/BE837382A/xx unknown
- 1976-01-08 SE SE7600122A patent/SE408508B/xx unknown
- 1976-01-12 NL NL7600259A patent/NL7600259A/xx not_active Application Discontinuation
- 1976-01-12 JP JP311276A patent/JPS5346701B2/ja not_active Expired
- 1976-01-12 CA CA243,354A patent/CA1040320A/en not_active Expired
- 1976-01-12 FR FR7600618A patent/FR2297496A1/fr not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008504685A (ja) * | 2004-06-23 | 2008-02-14 | マイクロン テクノロジー,インコーポレイテッド | Al2O3誘電体を用いるメモリ・セルの絶縁構造 |
Also Published As
Publication number | Publication date |
---|---|
SE7600122L (sv) | 1976-07-14 |
BE837382A (nl) | 1976-05-03 |
CA1040320A (en) | 1978-10-10 |
SE408508B (sv) | 1979-06-11 |
DE2600221A1 (de) | 1976-07-15 |
DE2600221B2 (de) | 1978-09-07 |
CH598695A5 (xx) | 1978-05-12 |
FR2297496A1 (fr) | 1976-08-06 |
IT1049016B (it) | 1981-01-20 |
IN144889B (xx) | 1978-07-22 |
GB1509949A (en) | 1978-05-10 |
JPS5346701B2 (xx) | 1978-12-15 |
NL7600259A (nl) | 1976-07-15 |