JPS5195785A - - Google Patents
Info
- Publication number
- JPS5195785A JPS5195785A JP51003112A JP311276A JPS5195785A JP S5195785 A JPS5195785 A JP S5195785A JP 51003112 A JP51003112 A JP 51003112A JP 311276 A JP311276 A JP 311276A JP S5195785 A JPS5195785 A JP S5195785A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/03—Manufacture or treatment wherein the substrate comprises sapphire, e.g. silicon-on-sapphire [SOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US54044375A | 1975-01-13 | 1975-01-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5195785A true JPS5195785A (cg-RX-API-DMAC7.html) | 1976-08-21 |
| JPS5346701B2 JPS5346701B2 (cg-RX-API-DMAC7.html) | 1978-12-15 |
Family
ID=24155496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP311276A Expired JPS5346701B2 (cg-RX-API-DMAC7.html) | 1975-01-13 | 1976-01-12 |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5346701B2 (cg-RX-API-DMAC7.html) |
| BE (1) | BE837382A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1040320A (cg-RX-API-DMAC7.html) |
| CH (1) | CH598695A5 (cg-RX-API-DMAC7.html) |
| DE (1) | DE2600221B2 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2297496A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1509949A (cg-RX-API-DMAC7.html) |
| IN (1) | IN144889B (cg-RX-API-DMAC7.html) |
| IT (1) | IT1049016B (cg-RX-API-DMAC7.html) |
| NL (1) | NL7600259A (cg-RX-API-DMAC7.html) |
| SE (1) | SE408508B (cg-RX-API-DMAC7.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008504685A (ja) * | 2004-06-23 | 2008-02-14 | マイクロン テクノロジー，インコーポレイテッド | Ａｌ２Ｏ３誘電体を用いるメモリ・セルの絶縁構造 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4448632A (en) * | 1981-05-25 | 1984-05-15 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor devices |
| JP2011119397A (ja) * | 2009-12-02 | 2011-06-16 | Canon Inc | 半導体装置及びその製造方法 |
-
1975
- 1975-10-10 IN IN1961/CAL/1975A patent/IN144889B/en unknown
- 1975-10-28 GB GB44375/75A patent/GB1509949A/en not_active Expired
- 1975-10-31 IT IT28892/75A patent/IT1049016B/it active
-
1976
- 1976-01-05 DE DE2600221A patent/DE2600221B2/de not_active Withdrawn
- 1976-01-07 CH CH12676A patent/CH598695A5/xx not_active IP Right Cessation
- 1976-01-07 BE BE7000759A patent/BE837382A/xx unknown
- 1976-01-08 SE SE7600122A patent/SE408508B/xx unknown
- 1976-01-12 JP JP311276A patent/JPS5346701B2/ja not_active Expired
- 1976-01-12 CA CA243,354A patent/CA1040320A/en not_active Expired
- 1976-01-12 NL NL7600259A patent/NL7600259A/xx not_active Application Discontinuation
- 1976-01-12 FR FR7600618A patent/FR2297496A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008504685A (ja) * | 2004-06-23 | 2008-02-14 | マイクロン テクノロジー，インコーポレイテッド | Ａｌ２Ｏ３誘電体を用いるメモリ・セルの絶縁構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA1040320A (en) | 1978-10-10 |
| DE2600221A1 (de) | 1976-07-15 |
| DE2600221B2 (de) | 1978-09-07 |
| SE7600122L (sv) | 1976-07-14 |
| IT1049016B (it) | 1981-01-20 |
| GB1509949A (en) | 1978-05-10 |
| SE408508B (sv) | 1979-06-11 |
| IN144889B (cg-RX-API-DMAC7.html) | 1978-07-22 |
| FR2297496A1 (fr) | 1976-08-06 |
| NL7600259A (nl) | 1976-07-15 |
| CH598695A5 (cg-RX-API-DMAC7.html) | 1978-05-12 |
| JPS5346701B2 (cg-RX-API-DMAC7.html) | 1978-12-15 |
| BE837382A (nl) | 1976-05-03 |