JPS5150588A - Shusekikairooyobi sonoseizohoho - Google Patents

Shusekikairooyobi sonoseizohoho

Info

Publication number
JPS5150588A
JPS5150588A JP50104158A JP10415875A JPS5150588A JP S5150588 A JPS5150588 A JP S5150588A JP 50104158 A JP50104158 A JP 50104158A JP 10415875 A JP10415875 A JP 10415875A JP S5150588 A JPS5150588 A JP S5150588A
Authority
JP
Japan
Prior art keywords
shusekikairooyobi
sonoseizohoho
shusekikairooyobi sonoseizohoho
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50104158A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6118343B2 (en, 2012
Inventor
Jii Ogyu Anri
Gerubaa Berunarudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre Electronique Horloger SA
Original Assignee
Centre Electronique Horloger SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electronique Horloger SA filed Critical Centre Electronique Horloger SA
Publication of JPS5150588A publication Critical patent/JPS5150588A/ja
Publication of JPS6118343B2 publication Critical patent/JPS6118343B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354Astable circuits
    • H03K3/3545Stabilisation of output, e.g. using crystal
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85Complementary IGFETs, e.g. CMOS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00Three-dimensional [3D] integrated devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP50104158A 1974-08-29 1975-08-29 Shusekikairooyobi sonoseizohoho Granted JPS5150588A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1178874A CH581904A5 (en, 2012) 1974-08-29 1974-08-29

Publications (2)

Publication Number Publication Date
JPS5150588A true JPS5150588A (en) 1976-05-04
JPS6118343B2 JPS6118343B2 (en, 2012) 1986-05-12

Family

ID=4376876

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50104158A Granted JPS5150588A (en) 1974-08-29 1975-08-29 Shusekikairooyobi sonoseizohoho

Country Status (4)

Country Link
US (1) US4041522A (en, 2012)
JP (1) JPS5150588A (en, 2012)
CH (1) CH581904A5 (en, 2012)
DE (1) DE2537564C2 (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH600678A5 (en, 2012) * 1975-08-12 1978-06-30 Centre Electron Horloger
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution
DE2751481C2 (de) * 1976-11-22 1986-10-23 Mostek Corp. (n.d.Ges.d.Staates Delaware), Carrollton, Tex. Lastimpedanz für eine statische Halbleiterspeicherzelle
CH621917B (fr) * 1977-06-27 Centre Electron Horloger Dispositif integre de commande.
CA1135854A (en) * 1977-09-30 1982-11-16 Michel Moussie Programmable read only memory cell
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
US4218747A (en) * 1978-06-05 1980-08-19 Fujitsu Limited Arithmetic and logic unit using basic cells
NL7806989A (nl) * 1978-06-29 1980-01-03 Philips Nv Geintegreerde schakeling.
JPS5519857A (en) * 1978-07-28 1980-02-12 Nec Corp Semiconductor
US4724530A (en) * 1978-10-03 1988-02-09 Rca Corporation Five transistor CMOS memory cell including diodes
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
CH628462A5 (fr) * 1978-12-22 1982-02-26 Centre Electron Horloger Source de tension de reference.
US4785341A (en) * 1979-06-29 1988-11-15 International Business Machines Corporation Interconnection of opposite conductivity type semiconductor regions
JPS58188155A (ja) * 1982-04-27 1983-11-02 Seiko Epson Corp 2層構造rom集積回路
JPS594067A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4658378A (en) * 1982-12-15 1987-04-14 Inmos Corporation Polysilicon resistor with low thermal activation energy
CH651177GA3 (en, 2012) * 1983-09-21 1985-09-13
US4679170A (en) * 1984-05-30 1987-07-07 Inmos Corporation Resistor with low thermal activation energy
US4560419A (en) * 1984-05-30 1985-12-24 Inmos Corporation Method of making polysilicon resistors with a low thermal activation energy
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
US6206829B1 (en) * 1996-07-12 2001-03-27 First Opinion Corporation Computerized medical diagnostic and treatment advice system including network access
USRE43433E1 (en) 1993-12-29 2012-05-29 Clinical Decision Support, Llc Computerized medical diagnostic and treatment advice system
US5660176A (en) 1993-12-29 1997-08-26 First Opinion Corporation Computerized medical diagnostic and treatment advice system
US6234964B1 (en) * 1997-03-13 2001-05-22 First Opinion Corporation Disease management system and method
US20020068857A1 (en) * 2000-02-14 2002-06-06 Iliff Edwin C. Automated diagnostic system and method including reuse of diagnostic objects
US7780595B2 (en) * 2003-05-15 2010-08-24 Clinical Decision Support, Llc Panel diagnostic method and system
US9081879B2 (en) * 2004-10-22 2015-07-14 Clinical Decision Support, Llc Matrix interface for medical diagnostic and treatment advice system and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3749987A (en) * 1971-08-09 1973-07-31 Ibm Semiconductor device embodying field effect transistors and schottky barrier diodes
CH542518A (fr) * 1972-02-18 1973-09-30 Centre Electron Horloger Circuit à transistors MOS complémentaires et son procédé de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
JPS6118343B2 (en, 2012) 1986-05-12
DE2537564A1 (de) 1976-03-11
US4041522A (en) 1977-08-09
DE2537564C2 (de) 1982-05-27
CH581904A5 (en, 2012) 1976-11-15

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