CH581904A5 - - Google Patents

Info

Publication number
CH581904A5
CH581904A5 CH1178874A CH1178874A CH581904A5 CH 581904 A5 CH581904 A5 CH 581904A5 CH 1178874 A CH1178874 A CH 1178874A CH 1178874 A CH1178874 A CH 1178874A CH 581904 A5 CH581904 A5 CH 581904A5
Authority
CH
Switzerland
Application number
CH1178874A
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Priority to CH1178874A priority Critical patent/CH581904A5/xx
Priority to US05/605,845 priority patent/US4041522A/en
Priority to DE2537564A priority patent/DE2537564C2/de
Priority to JP50104158A priority patent/JPS5150588A/ja
Publication of CH581904A5 publication Critical patent/CH581904A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/354—Astable circuits
    • H03K3/3545—Stabilisation of output, e.g. using crystal
CH1178874A 1974-08-29 1974-08-29 CH581904A5 (xx)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH1178874A CH581904A5 (xx) 1974-08-29 1974-08-29
US05/605,845 US4041522A (en) 1974-08-29 1975-08-19 Integrated circuit and manufacture thereof
DE2537564A DE2537564C2 (de) 1974-08-29 1975-08-22 Verfahren zur Herstellung einer integrierten Schaltung sowie Verwendung dieses Verfahrens
JP50104158A JPS5150588A (en) 1974-08-29 1975-08-29 Shusekikairooyobi sonoseizohoho

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1178874A CH581904A5 (xx) 1974-08-29 1974-08-29

Publications (1)

Publication Number Publication Date
CH581904A5 true CH581904A5 (xx) 1976-11-15

Family

ID=4376876

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1178874A CH581904A5 (xx) 1974-08-29 1974-08-29

Country Status (4)

Country Link
US (1) US4041522A (xx)
JP (1) JPS5150588A (xx)
CH (1) CH581904A5 (xx)
DE (1) DE2537564C2 (xx)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2635243A1 (de) * 1975-08-12 1977-03-03 Centre Electron Horloger Aktive integrierte schaltungsanordnung
DE3432418A1 (de) * 1983-09-21 1985-03-28 Centre Electronique Horloger S.A., Neuchâtel Multiplizierschaltkreis fuer logische signale

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution
DE2751481C2 (de) * 1976-11-22 1986-10-23 Mostek Corp. (n.d.Ges.d.Staates Delaware), Carrollton, Tex. Lastimpedanz für eine statische Halbleiterspeicherzelle
CH621917B (fr) * 1977-06-27 Centre Electron Horloger Dispositif integre de commande.
CA1135854A (en) * 1977-09-30 1982-11-16 Michel Moussie Programmable read only memory cell
NL190710C (nl) * 1978-02-10 1994-07-01 Nec Corp Geintegreerde halfgeleiderketen.
US4218747A (en) * 1978-06-05 1980-08-19 Fujitsu Limited Arithmetic and logic unit using basic cells
NL7806989A (nl) * 1978-06-29 1980-01-03 Philips Nv Geintegreerde schakeling.
JPS5519857A (en) * 1978-07-28 1980-02-12 Nec Corp Semiconductor
US4724530A (en) * 1978-10-03 1988-02-09 Rca Corporation Five transistor CMOS memory cell including diodes
US4212684A (en) * 1978-11-20 1980-07-15 Ncr Corporation CISFET Processing including simultaneous doping of silicon components and FET channels
CH628462A5 (fr) * 1978-12-22 1982-02-26 Centre Electron Horloger Source de tension de reference.
JPS55134962A (en) * 1979-04-09 1980-10-21 Toshiba Corp Semiconductor device
US4785341A (en) * 1979-06-29 1988-11-15 International Business Machines Corporation Interconnection of opposite conductivity type semiconductor regions
JPS58188155A (ja) * 1982-04-27 1983-11-02 Seiko Epson Corp ２層構造ｒｏｍ集積回路
JPS594067A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体装置
US4658378A (en) * 1982-12-15 1987-04-14 Inmos Corporation Polysilicon resistor with low thermal activation energy
US4679170A (en) * 1984-05-30 1987-07-07 Inmos Corporation Resistor with low thermal activation energy
US4560419A (en) * 1984-05-30 1985-12-24 Inmos Corporation Method of making polysilicon resistors with a low thermal activation energy
KR890004495B1 (ko) * 1984-11-29 1989-11-06 가부시끼가이샤 도오시바 반도체 장치
JP2895166B2 (ja) * 1990-05-31 1999-05-24 キヤノン株式会社 半導体装置の製造方法
USRE43433E1 (en) 1993-12-29 2012-05-29 Clinical Decision Support, Llc Computerized medical diagnostic and treatment advice system
US5660176A (en) * 1993-12-29 1997-08-26 First Opinion Corporation Computerized medical diagnostic and treatment advice system
US6206829B1 (en) * 1996-07-12 2001-03-27 First Opinion Corporation Computerized medical diagnostic and treatment advice system including network access
US6234964B1 (en) * 1997-03-13 2001-05-22 First Opinion Corporation Disease management system and method
US20020068857A1 (en) * 2000-02-14 2002-06-06 Iliff Edwin C. Automated diagnostic system and method including reuse of diagnostic objects
US7780595B2 (en) * 2003-05-15 2010-08-24 Clinical Decision Support, Llc Panel diagnostic method and system
US9081879B2 (en) * 2004-10-22 2015-07-14 Clinical Decision Support, Llc Matrix interface for medical diagnostic and treatment advice system and method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3749987A (en) * 1971-08-09 1973-07-31 Ibm Semiconductor device embodying field effect transistors and schottky barrier diodes
CH542518A (fr) * 1972-02-18 1973-09-30 Centre Electron Horloger Circuit à transistors MOS complémentaires et son procédé de fabrication

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2635243A1 (de) * 1975-08-12 1977-03-03 Centre Electron Horloger Aktive integrierte schaltungsanordnung
DE3432418A1 (de) * 1983-09-21 1985-03-28 Centre Electronique Horloger S.A., Neuchâtel Multiplizierschaltkreis fuer logische signale

Also Published As

Publication number Publication date
US4041522A (en) 1977-08-09
DE2537564A1 (de) 1976-03-11
DE2537564C2 (de) 1982-05-27
JPS6118343B2 (xx) 1986-05-12
JPS5150588A (en) 1976-05-04

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Legal Events

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PL Patent ceased