JPS5145951B2 - - Google Patents

Info

Publication number
JPS5145951B2
JPS5145951B2 JP47055993A JP5599372A JPS5145951B2 JP S5145951 B2 JPS5145951 B2 JP S5145951B2 JP 47055993 A JP47055993 A JP 47055993A JP 5599372 A JP5599372 A JP 5599372A JP S5145951 B2 JPS5145951 B2 JP S5145951B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47055993A
Other languages
Japanese (ja)
Other versions
JPS4917984A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47055993A priority Critical patent/JPS5145951B2/ja
Priority to GB2484773A priority patent/GB1384206A/en
Priority to US05/365,371 priority patent/US3988181A/en
Publication of JPS4917984A publication Critical patent/JPS4917984A/ja
Publication of JPS5145951B2 publication Critical patent/JPS5145951B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00Resistors, capacitors or inductors
    • H10D1/40Resistors
    • H10D1/47Resistors having no potential barriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/3215Doping the layers
    • H01L21/32155Doping polycristalline - or amorphous silicon layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/118Oxide films
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/122Polycrystalline

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP47055993A 1972-06-07 1972-06-07 Expired JPS5145951B2 (enrdf_load_stackoverflow)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP47055993A JPS5145951B2 (enrdf_load_stackoverflow) 1972-06-07 1972-06-07
GB2484773A GB1384206A (en) 1972-06-07 1973-05-24 Method of forming a resistance layer in a semiconductor integrated circuit device
US05/365,371 US3988181A (en) 1972-06-07 1973-05-30 Method of doping a polycrystalline silicon layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47055993A JPS5145951B2 (enrdf_load_stackoverflow) 1972-06-07 1972-06-07

Publications (2)

Publication Number Publication Date
JPS4917984A JPS4917984A (enrdf_load_stackoverflow) 1974-02-16
JPS5145951B2 true JPS5145951B2 (enrdf_load_stackoverflow) 1976-12-06

Family

ID=13014592

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47055993A Expired JPS5145951B2 (enrdf_load_stackoverflow) 1972-06-07 1972-06-07

Country Status (3)

Country Link
US (1) US3988181A (enrdf_load_stackoverflow)
JP (1) JPS5145951B2 (enrdf_load_stackoverflow)
GB (1) GB1384206A (enrdf_load_stackoverflow)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53132275A (en) * 1977-04-25 1978-11-17 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its production
JPS61206231A (ja) * 1985-03-08 1986-09-12 Mitsubishi Electric Corp 半導体装置およびその製造方法
US4764026A (en) * 1986-07-07 1988-08-16 Varian Associates, Inc. Semiconductor wafer temperature measuring device and method
DE69027836T2 (de) * 1989-03-23 1997-03-06 Oki Electric Ind Co Ltd Verfahren zur herstellung von halbleiteranordnungen
AU5977190A (en) * 1989-07-27 1991-01-31 Nishizawa, Junichi Impurity doping method with adsorbed diffusion source
EP0417456A3 (en) * 1989-08-11 1991-07-03 Seiko Instruments Inc. Method of producing semiconductor device
EP0430274A3 (en) * 1989-12-01 1993-03-24 Seiko Instruments Inc. Method of producing bipolar transistor
JP2906260B2 (ja) * 1989-12-01 1999-06-14 セイコーインスツルメンツ株式会社 Pn接合素子の製造方法
EP0430275A3 (en) * 1989-12-01 1993-10-27 Seiko Instr Inc Doping method of barrier region in semiconductor device
EP0430166A3 (en) * 1989-12-01 1993-05-12 Seiko Instruments Inc. Method of doping impurity into semiconductor films and patterned semiconductor strip
JP2920546B2 (ja) * 1989-12-06 1999-07-19 セイコーインスツルメンツ株式会社 同極ゲートmisトランジスタの製造方法
EP0505877A2 (en) * 1991-03-27 1992-09-30 Seiko Instruments Inc. Impurity doping method with adsorbed diffusion source
JP3001362B2 (ja) * 1993-12-17 2000-01-24 日本電気株式会社 半導体装置の製造方法
US7425736B2 (en) * 2005-06-07 2008-09-16 United Microelectronics Corp. Silicon layer with high resistance and fabricating method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460007A (en) * 1967-07-03 1969-08-05 Rca Corp Semiconductor junction device
US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
US3673679A (en) * 1970-12-01 1972-07-04 Texas Instruments Inc Complementary insulated gate field effect devices
US3690968A (en) * 1971-03-05 1972-09-12 Advanced Memory Syst Method for forming a field effect device

Also Published As

Publication number Publication date
JPS4917984A (enrdf_load_stackoverflow) 1974-02-16
USB365371I5 (enrdf_load_stackoverflow) 1975-01-28
GB1384206A (en) 1975-02-19
US3988181A (en) 1976-10-26

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