Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
  • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
  • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
  • H10D62/213—Channel regions of field-effect devices
  • H10D62/335—Channel regions of field-effect devices of charge-coupled devices
• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
  • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
  • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
  • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10B—ELECTRONIC MEMORY DEVICES
  • H10B12/00—Dynamic random access memory [DRAM] devices
  • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D44/00—Charge transfer devices
  • H10D44/40—Charge-coupled devices [CCD]
  • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

• Engineering & Computer Science (AREA)
• Computer Hardware Design (AREA)
• Semiconductor Memories (AREA)
• Non-Volatile Memory (AREA)
• Read Only Memory (AREA)
• Solid State Image Pick-Up Elements (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=22574617

Family Applications (1)

Country Status (7)

Cited By (1)

Families Citing this family (3)

Family Cites Families (1)

• 1972
  • 1972-06-23 ES ES404185A patent/ES404185A1/es not_active Expired
  • 1972-06-26 CA CA145,628A patent/CA961169A/en not_active Expired
  • 1972-06-27 IT IT26236/72A patent/IT956844B/it active
  • 1972-06-28 CH CH972872A patent/CH548086A/xx not_active IP Right Cessation
  • 1972-06-30 FR FR7224819*A patent/FR2144904B1/fr not_active Expired
  • 1972-07-04 DE DE2232756A patent/DE2232756C2/de not_active Expired
  • 1972-07-05 JP JP47066774A patent/JPS5145946B1/ja active Pending

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